Inventor · disambiguated record
Yasumitsu Kunoh
Also filed as: KUNOH YASUMITSU
9 granted patents·12 pending applications·17 citations·filing 2006–2023
81Inventor score
Files withSANYO ELECTRIC CO12NUVOTON TECHNOLOGY CORP JAPAN4BESSHO YASUYUKI2HATA MASAYUKI1PANASONIC IP MAN CO LTD1
Top patents by PatentIndex Score
21 records- 0183US11258001B2Semiconductor light-emitting element and semiconductor light-emitting deviceNUVOTON TECHNOLOGY CORP JAPAN·Filed 2020·Granted Feb 22, 2022·1 cites·19 claims
- 0280US8064492B2Method of manufacturing semiconductor laser device, semiconductor laser device and light apparatusBESSHO YASUYUKI·Filed 2010·Granted Nov 22, 2011·5 cites·3 claims
- 0375US7880177B2Semiconductor light-emitting device, illuminator and method of manufacturing semiconductor light-emitting deviceSANYO ELECTRIC CO·Filed 2007·Granted Feb 1, 2011·7 cites·16 claims
- 0468US12002914B2Semiconductor light-emitting element and semiconductor light-emitting deviceNUVOTON TECHNOLOGY CORP JAPAN·Filed 2022·Granted Jun 4, 2024·0 cites·18 claims
- 0568US7488667B2Method for manufacturing nitride-base semiconductor element and nitride-base semiconductor elementSANYO ELECTRIC CO·Filed 2006·Granted Feb 10, 2009·4 cites·20 claims
- 0663US2023387662A1Semiconductor laser elementNUVOTON TECHNOLOGY CORP JAPAN·Filed 2023·Application pending·0 cites
- 0751US2010079359A1Semiconductor laser device and displaySANYO ELECTRIC CO·Filed 2009·Application pending·0 cites
- 0848US12255278B2Semiconductor light emitting element and semiconductor light emitting deviceNUVOTON TECHNOLOGY CORP JAPAN·Filed 2021·Granted Mar 18, 2025·0 cites·5 claims
- 0946US7929587B2Semiconductor laser diode element and method of manufacturing the sameSANYO ELECTRIC CO·Filed 2008·Granted Apr 19, 2011·0 cites·20 claims
- 1046US2011013659A1Semiconductor laser device and method of manufacturing the sameSANYO ELECTRIC CO·Filed 2009·Application pending·0 cites
- 1146US2010265981A1Nitride-based semiconductor light-emitting diode, nitride-based semiconductor laser device, method of manufacturing the same, and method of forming nitride-based semiconductor layerSANYO ELECTRIC CO·Filed 2008·Application pending·0 cites
- 1246US2010080001A1Semiconductor laser device and displaySANYO ELECTRIC CO·Filed 2009·Application pending·0 cites
- 1345US8085825B2Method of fabricating semiconductor laser diode apparatus and semiconductor laser diode apparatusHATA MASAYUKI·Filed 2008·Granted Dec 27, 2011·0 cites·11 claims
- 1445US2010284433A1Semiconductor laser device and displaySANYO ELECTRIC CO·Filed 2009·Application pending·0 cites
- 1545US2010290498A1Semiconductor laser device and displaySANYO ELECTRIC CO·Filed 2009·Application pending·0 cites
- 1644US7759219B2Method of manufacturing nitride semiconductor deviceSANYO ELECTRIC CO·Filed 2006·Granted Jul 20, 2010·0 cites·18 claims
- 1743US2012033701A1Method of manufacturing semiconductor laser device, semiconductor laser device and light apparatusBESSHO YASUYUKI·Filed 2011·Application pending·0 cites
- 1840US2007205426A1Semiconductor light-emitting deviceSANYO ELECTRONIC CO LTD·Filed 2007·Application pending·0 cites
- 1936US2011101419A1Semiconductor device, method of manufacturing semiconductor device and optical apparatusSANYO ELECTRIC CO·Filed 2010·Application pending·0 cites
- 2035US2010193833A1Nitride-Based Semiconductor Device, Light Apparatus, and Method of Manufacturing Nitride-Based Semiconductor DeviceSANYO ELECTRIC CO·Filed 2010·Application pending·0 cites
- 2134US2016372631A1Light emitting diodePANASONIC IP MAN CO LTD·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →