Inventor · disambiguated record

Marcus Johannes Henricus Van Dal

Also filed as: VAN DAL MARCUS · VAN DAL MARCUS J H · VAN DAL MARCUS JOHANNES HENDRICUS · VAN DAL MARCUS JOHANNES HENRIC

94 granted patents·56 pending applications·111 citations·filing 2003–2025

99Inventor score

Technology areasH10D H10P H10W H10N H10K

Files withTAIWAN SEMICONDUCTOR MFG CO LTD135 KONINKL PHILIPS ELECTRONICS NV6 NXP BV3 IMEC INTER UNI MICRO ELECTR2 HUMBERT AURELIE1

Top patents by PatentIndex Score

150 records

0198US11742292B2Integrated chip having a buried power railTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 29, 2023·4 cites·20 claims
0298US11728244B2Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·4 cites·20 claims
0397US12021154B2Transistor, integrated circuit, and manufacturing method of transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 25, 2024·2 cites·20 claims
0497US11659721B2Methods of manufacturing a field effect transistor using carbon nanotubes and field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 23, 2023·3 cites·20 claims
0597US11605740B2Transistor, integrated circuit, and manufacturing method of transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 14, 2023·3 cites·20 claims
0697US11004789B2Semiconductor device including back side power supply circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 11, 2021·14 cites·20 claims
0796US11653507B2Gate all around semiconductor structure with diffusion breakTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 16, 2023·2 cites·20 claims
0895US10971684B2Intercalated metal/dielectric structure for nonvolatile memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 6, 2021·4 cites·20 claims
0994US11990514B2Protrusion field-effect transistor and methods of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 21, 2024·2 cites·20 claims
1094US11791420B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·2 cites·20 claims
1193US11956940B2Vertical heterostructure semiconductor memory cell and methods for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 9, 2024·1 cites·20 claims
1293US11482609B2Ferroelectric channel field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 25, 2022·2 cites·20 claims
1393US11069813B2Localized heating in laser annealing processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 20, 2021·6 cites·20 claims
1492US11784234B2Ferroelectric channel field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 10, 2023·1 cites·20 claims
1592US11569352B2Protrusion field-effect transistor and methods of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 31, 2023·2 cites·20 claims
1692US11088337B2Methods of manufacturing a field effect transistor using carbon nanotubes and field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 10, 2021·6 cites·20 claims
1791US11450748B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·2 cites·20 claims
1891US11387362B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 12, 2022·6 cites·20 claims
1990US12206024B2Transistors including crystalline raised active regions and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 21, 2025·1 cites·20 claims
2090US11626507B2Method of manufacturing FinFETs having barrier layers with specified SiGe doping concentrationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 11, 2023·4 cites·20 claims
2190US11430512B2Semiconducting metal oxide memory device using hydrogen-mediated threshold voltage modulation and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 30, 2022·2 cites·20 claims
2290US11276832B2Semiconductor structure with diffusion break and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 15, 2022·4 cites·20 claims
2389US11769798B2Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 26, 2023·1 cites·20 claims
2488US11587786B2Crystalline semiconductor layer formed in BEOL processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 21, 2023·1 cites·20 claims
2588US11165032B2Field effect transistor using carbon nanotubesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 2, 2021·2 cites·20 claims
2687US12381075B2Cuprous oxide devices and formation methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 5, 2025·0 cites·20 claims
2787US2025359182A1Access transistor including a metal oxide barrier layer and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2887US2025316475A1Cuprous oxide devices and formation methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2986US12137621B2Intercalated metal/dielectric structure for nonvolatile memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 5, 2024·0 cites·20 claims
3086US11869975B2Thin-film transistors and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 9, 2024·1 cites·20 claims
3186US11672110B2Heterostructure oxide semiconductor vertical gate-all-around (VGAA) transistor and methods for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·1 cites·20 claims
3286US2025151347A1Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3386US2024381795A1Intercalated metal/dielectric structure for nonvolatile memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3485US10978292B2Cuprous oxide devices and formation methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 13, 2021·2 cites·20 claims
3585US2024414927A1Methods of Manufacturing a Field Effect Transistor Using Carbon Nanotubes and Field Effect TransistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3684US12249656B2Transistor, integrated circuit, and manufacturing method of transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Mar 11, 2025·0 cites·20 claims
3784US12218198B2Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
3883US12166084B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 10, 2024·0 cites·20 claims
3983US12069874B2Methods of manufacturing a field effect transistor using carbon nanotubes and field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·0 cites·20 claims
4083US2024381673A1Semiconductor devices using carbon nanotubesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4182US12500168B2Semiconductor device including back side power supply circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 16, 2025·0 cites·20 claims
4282US12324360B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 3, 2025·0 cites·20 claims
4382US12191375B2Ferroelectric channel field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 7, 2025·0 cites·20 claims
4482US12051702B2Crystalline semiconductor layer formed in BEOL processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 30, 2024·0 cites·20 claims
4582US2025366156A1Cfet with different channel materials for nfet and pfet and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4682US2024365569A1Gate all around semiconductor structure with diffusion breakTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4781US12512410B2Integrated chip having a buried power railTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 30, 2025·0 cites·20 claims
4881US12453295B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 21, 2025·0 cites·20 claims
4981US12402355B2Access transistor including a metal oxide barrier layer and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 26, 2025·0 cites·20 claims
5081US12369360B2Protrusion field-effect transistor and methods of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 22, 2025·0 cites·20 claims

Showing the top 50 of 150 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →