Inventor · disambiguated record
Tsuching Yang
Also filed as: YANG TSUCHING
28 granted patents·16 pending applications·10 citations·filing 2020–2025
93Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD44
Top patents by PatentIndex Score
44 records- 0196US11710790B2Memory array channel regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 25, 2023·4 cites·20 claims
- 0295US11903214B2Three-dimensional ferroelectric random access memory devices and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·2 cites·20 claims
- 0392US11640974B2Memory array isolation structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 2, 2023·2 cites·20 claims
- 0491US12376310B2Memory cell having source or drain electrode with kink portion, memory array and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 29, 2025·1 cites·20 claims
- 0587US2025311225A1Memory device and method for making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0686US2025287603A1Three-dimensional ferroelectric random access memory devices and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0785US12336183B2Three-dimensional ferroelectric random access memory devices and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 0884US12356628B2Memory device and method for making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 0984US12058860B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 6, 2024·1 cites·20 claims
- 1083US2025318137A1Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1182US12363907B2Memory device comprising conductive pillarsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 15, 2025·0 cites·20 claims
- 1282US12288820B2Transistor, integrated circuit, and manufacturing method of transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 29, 2025·0 cites·20 claims
- 1382US2024349508A1Method of forming memory device including conductive pillarsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1481US12218250B2Oxide semiconductor transistor structure in 3-d device and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 1581US2025133774A1Oxide Semiconductor Transistor Structure in 3-D Device and Methods for Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1680US12382639B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 5, 2025·0 cites·20 claims
- 1780US2025120091A1Memory array source/drain electrode structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1879US12144182B2Memory device and method for making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 12, 2024·0 cites·20 claims
- 1979US12069863B2Method of forming memory device comprising conductive pillarsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 20, 2024·0 cites·20 claims
- 2079US2024365550A1Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2179US2024363527A1Semiconductor device, and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2279US2025331190A1Method of forming memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2379US2024389333A1Memory device and method for making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2479US2024387727A1Manufacturing method of transistor and manufacturing method of integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2578US12219777B2Memory array source/drain electrode structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 2678US12068245B2Memory device, semiconductor device, and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 20, 2024·0 cites·20 claims
- 2778US2024379778A1Memory Array Isolation StructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2876US12471346B2Memory array isolation structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 11, 2025·0 cites·20 claims
- 2974US2024379847A1Memory Array Channel RegionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3074US2023371258A1Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3173US12272750B2Memory array channel regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·0 cites·20 claims
- 3272US11862726B2Transistor, integrated circuit, and manufacturing method of transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 2, 2024·0 cites·20 claims
- 3372US11729988B2Memory device comprising conductive pillars and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·0 cites·20 claims
- 3472US11569165B2Memory cell array, semiconductor device including the same, and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 31, 2023·0 cites·20 claims
- 3572US11545507B2Memory device and method for making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 3, 2023·0 cites·20 claims
- 3672US2025311220A1Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3771US11721767B2Oxide semiconductor transistor structure in 3-D device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 8, 2023·0 cites·20 claims
- 3870US11729987B2Memory array source/drain electrode structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 15, 2023·0 cites·20 claims
- 3968US12302562B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 13, 2025·0 cites·20 claims
- 4068US11903213B2Memory device and method for making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·0 cites·12 claims
- 4168US11696448B2Memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 4, 2023·0 cites·20 claims
- 4267US11856781B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 4367US2022384487A1Memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4455US12414295B2Semiconductor memory structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 9, 2025·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →