Inventor · disambiguated record
Hung-Chang Sun
Also filed as: SUN HUNG-CHANG
47 granted patents·20 pending applications·28 citations·filing 2009–2025
96Inventor score
Top patents by PatentIndex Score
67 records- 0196US11710790B2Memory array channel regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 25, 2023·4 cites·20 claims
- 0296US10854503B2Semiconductor structure with air gap and method sealing the air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 1, 2020·9 cites·20 claims
- 0395US11903214B2Three-dimensional ferroelectric random access memory devices and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·2 cites·20 claims
- 0492US11723199B2Protective liner layers in 3D memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 8, 2023·2 cites·20 claims
- 0592US11640974B2Memory array isolation structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 2, 2023·2 cites·20 claims
- 0689US2025105054A1Semiconductor structure with air gap and method sealing the air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0787US2025311225A1Memory device and method for making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0886US2025287603A1Three-dimensional ferroelectric random access memory devices and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0985US12336183B2Three-dimensional ferroelectric random access memory devices and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 1085US12165912B2Semiconductor structure with air gap and method sealing the air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 1185US2025294771A1High selectivity isolation structure for improving effectiveness of 3d memory fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1284US12356628B2Memory device and method for making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 1384US12058860B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 6, 2024·1 cites·20 claims
- 1484US10692760B2Semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 23, 2020·3 cites·20 claims
- 1583US12057495B2Semiconductor device with conformal source/drain layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 6, 2024·0 cites·20 claims
- 1683US2025318137A1Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1782US12363907B2Memory device comprising conductive pillarsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 15, 2025·0 cites·20 claims
- 1882US12288820B2Transistor, integrated circuit, and manufacturing method of transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 29, 2025·0 cites·20 claims
- 1982US11688631B2Semiconductor structure with air gap and method sealing the air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 27, 2023·0 cites·20 claims
- 2082US2024349508A1Method of forming memory device including conductive pillarsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2181US12349362B2High selectivity isolation structure for improving effectiveness of 3D memory fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 1, 2025·0 cites·20 claims
- 2281US12218250B2Oxide semiconductor transistor structure in 3-d device and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 2381US11031291B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 8, 2021·2 cites·20 claims
- 2481US2025133774A1Oxide Semiconductor Transistor Structure in 3-D Device and Methods for Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2580US12382639B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 5, 2025·0 cites·20 claims
- 2680US9960085B2Multiple patterning techniques for metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 1, 2018·3 cites·20 claims
- 2780US2025120091A1Memory array source/drain electrode structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2879US12144182B2Memory device and method for making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 12, 2024·0 cites·20 claims
- 2979US12069863B2Method of forming memory device comprising conductive pillarsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 20, 2024·0 cites·20 claims
- 3079US2024365550A1Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3179US2024363527A1Semiconductor device, and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3279US2024389333A1Memory device and method for making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3379US2024387727A1Manufacturing method of transistor and manufacturing method of integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3478US12219777B2Memory array source/drain electrode structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 3578US12068245B2Memory device, semiconductor device, and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 20, 2024·0 cites·20 claims
- 3678US2024379778A1Memory Array Isolation StructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3777US12402394B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 26, 2025·0 cites·20 claims
- 3877US2025324733A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3976US12471346B2Memory array isolation structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 11, 2025·0 cites·20 claims
- 4075US12051620B2Semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 30, 2024·0 cites·20 claims
- 4175US11705507B2Semiconductor device and forming method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 18, 2023·0 cites·20 claims
- 4275US11398404B2Semiconductor structure with air gap and method sealing the air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 26, 2022·0 cites·20 claims
- 4374US12342539B2Protective liner layers in 3D memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 24, 2025·0 cites·20 claims
- 4474US2024379847A1Memory Array Channel RegionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4574US2024381651A1Semiconductor Memory Structures And Method Of Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4674US2023371258A1Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4773US12272750B2Memory array channel regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·0 cites·20 claims
- 4872US11862726B2Transistor, integrated circuit, and manufacturing method of transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 2, 2024·0 cites·20 claims
- 4972US11729988B2Memory device comprising conductive pillars and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·0 cites·20 claims
- 5072US11569165B2Memory cell array, semiconductor device including the same, and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 31, 2023·0 cites·20 claims
Showing the top 50 of 67 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →