Inventor · disambiguated record
Gabriel R. Cueva
Also filed as: CUEVA GABRIEL · CUEVA GABRIEL R
7 granted patents·2 pending applications·11 citations·filing 2008–2024
76Inventor score
Top patents by PatentIndex Score
9 records- 0185US11158575B2Parasitic capacitance reduction in GaN-on-silicon devicesMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2018·Granted Oct 26, 2021·3 cites·18 claims
- 0281US12266523B2Parasitic capacitance reduction in GaN-on-silicon devicesMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2024·Granted Apr 1, 2025·0 cites·20 claims
- 0378US7943286B2Reproducible, high yield method for fabricating ultra-short T-gates on HFETsBAE SYSTEMS INFORMATION·Filed 2008·Granted May 17, 2011·7 cites·4 claims
- 0474US2024420995A1Atomic layer deposition of barrier metal layer for electrode of gallium nitride material deviceMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2024·Application pending·0 cites
- 0571US11929364B2Parasitic capacitance reduction in GaN devicesMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2021·Granted Mar 12, 2024·0 cites·20 claims
- 0664US9876082B2Transistor with hole barrier layerMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2015·Granted Jan 23, 2018·1 cites·20 claims
- 0762US12112983B2Atomic layer deposition of barrier metal layer for electrode of gallium nitride material deviceMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2020·Granted Oct 8, 2024·0 cites·19 claims
- 0848US2023216471A1Suppression of parasitic acoustic waves in integrated circuit devicesMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2021·Application pending·0 cites
- 0938US9136111B1Field effect transistors with gate electrodes having Ni and Ti metal layersCHU KANIN·Filed 2012·Granted Sep 15, 2015·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →