Inventor · disambiguated record
Dae-Sub Jung
Also filed as: JUNG DAE-SUB
15 granted patents·2 pending applications·4 citations·filing 2015–2024
85Inventor score
Files withSEMICONDUCTOR MFG INT SHANGHAI CORP13SEMICONDUCTOR MFG INT BEIJING CORP2FLASHSILICON INC1SEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION1
Top patents by PatentIndex Score
17 records- 0172US9837323B2Semiconductor structure and fabrication method thereofSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2016·Granted Dec 5, 2017·2 cites·19 claims
- 0267US10038027B2CMOS image sensor and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2017·Granted Jul 31, 2018·1 cites·14 claims
- 0366US10411115B2Semiconductor device including a recessed insulation region and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2017·Granted Sep 10, 2019·1 cites·20 claims
- 0462US2025386492A1Graded channel devices for nor flash cell array and method of fabricating the sameFLASHSILICON INC·Filed 2024·Application pending·0 cites
- 0561US10804105B2Semiconductor device and manufacture thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2020·Granted Oct 13, 2020·0 cites·15 claims
- 0657US2021376145A1Ldmos device and manufacturing method thereofSEMICONDUCTOR MFG INT BEIJING CORP·Filed 2021·Application pending·0 cites
- 0756US11121252B2LDMOS device and manufacturing method thereofSEMICONDUCTOR MFG INT BEIJING CORP·Filed 2019·Granted Sep 14, 2021·0 cites·9 claims
- 0854US10600650B2Semiconductor device and manufacture thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2018·Granted Mar 24, 2020·0 cites·7 claims
- 0953US10340304B2CMOS image sensorSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2018·Granted Jul 2, 2019·0 cites·17 claims
- 1053US10090403B2Power semiconductor device with semiconductor pillarsSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2017·Granted Oct 2, 2018·0 cites·17 claims
- 1152US10490629B2Method for fabricating power semiconductor deviceSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2018·Granted Nov 26, 2019·0 cites·14 claims
- 1251US9711627B2Power semiconductor device and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Jul 18, 2017·0 cites·15 claims
- 1347US10032865B2Powers semiconductor deviceSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Jul 24, 2018·0 cites·8 claims
- 1444US11545396B2Semiconductor structure and method for forming the sameSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2020·Granted Jan 3, 2023·0 cites·11 claims
- 1542US11239358B2Semiconductor structure with isolation structures in doped region and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2020·Granted Feb 1, 2022·0 cites·14 claims
- 1631US10593781B2Semiconductor device and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2017·Granted Mar 17, 2020·0 cites·20 claims
- 1728US9536742B2Lateral double-diffused MOSFET and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2015·Granted Jan 3, 2017·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →