Inventor · disambiguated record
Ding Wang
Also filed as: WANG DING · WANG DING-SHUO
8 granted patents·12 pending applications·30 citations·filing 2009–2025
79Inventor score
Files withUNIV MICHIGAN REGENTS8NAT UNIV TSING HUA3BIOARDIS LLC2UNIV KUNMING SCIENCE & TECHNOLOGY2JINGMEN GEM CO LTD1
Top patents by PatentIndex Score
20 records- 0192US9666256B1Spin-orbit torque magnetic random access memory and method of writing the sameNAT UNIV TSING HUA·Filed 2016·Granted May 30, 2017·22 cites·19 claims
- 0282US9123887B2Magnetic electronic deviceNAT UNIV TSING HUA·Filed 2013·Granted Sep 1, 2015·7 cites·7 claims
- 0373US2025318325A1Nitride semiconductor substrate, semiconductor element, and method for manufacturing nitride semiconductor substrateUNIV MIE·Filed 2025·Application pending·0 cites
- 0466US12506148B2Preparation methods of doped manganese phosphate precursor and doped lithium manganese phosphate cathode materialUNIV KUNMING SCIENCE & TECHNOLOGY·Filed 2025·Granted Dec 23, 2025·0 cites·3 claims
- 0564US11279697B2Aromatic derivative, preparation method for same, and medical applications thereofBIOARDIS LLC·Filed 2018·Granted Mar 22, 2022·1 cites·22 claims
- 0661US2024268236A1Magnetic tunnel junction (mtj) having a diffusion blocking spacer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0760US2024166533A1High-nickel ternary core-shell precursor, positive electrode material and preparation method thereforJINGMEN GEM CO LTD·Filed 2022·Application pending·0 cites
- 0856US2025227949A1Heterostructures with nanostructures of layered materialUNIV MICHIGAN REGENTS·Filed 2023·Application pending·0 cites
- 0955US2025169097A1Epitaxial nitride ferroelectronic devicesUNIV MICHIGAN REGENTS·Filed 2023·Application pending·0 cites
- 1055US2025149334A1Lattice polarity control in iii-nitride semiconductor heterostructuresUNIV MICHIGAN REGENTS·Filed 2023·Application pending·0 cites
- 1153US2025338534A1Ferroelectric quaternary iii-nitride alloy-based devicesUNIV MICHIGAN REGENTS·Filed 2025·Application pending·0 cites
- 1253US2024429306A1Semiconductor heterostructures with quaternary iii-nitride alloyUNIV MICHIGAN REGENTS·Filed 2022·Application pending·0 cites
- 1353US2023070465A1Epitaxial gallium nitride alloy ferroelectronicsUNIV MICHIGAN REGENTS·Filed 2022·Application pending·0 cites
- 1451US2024242963A1Epitaxial nitride ferroelectronicsUNIV MICHIGAN REGENTS·Filed 2022·Application pending·0 cites
- 1549US2024395921A1Semiconductor heterostructures with scandium iii-nitride layerUNIV MICHIGAN REGENTS·Filed 2022·Application pending·0 cites
- 1648US12371343B1Manganese iron oxide and preparation method thereof, and preparation method for lithium manganese iron phosphate cathode materialsUNIV KUNMING SCIENCE & TECHNOLOGY·Filed 2025·Granted Jul 29, 2025·0 cites·20 claims
- 1747US2011240476A1Fabrication of conductive nanostructures on a flexible substrateWANG DING·Filed 2009·Application pending·0 cites
- 1845US11795174B2Anti-pain compound and preparation method thereofLUNAN PHARMACEUTICAL GROUP CORP·Filed 2018·Granted Oct 24, 2023·0 cites·15 claims
- 1944US11976058B2Aromatic derivatives, preparation methods, and medical uses thereofBIOARDIS LLC·Filed 2020·Granted May 7, 2024·0 cites·48 claims
- 2041US9466786B2Magnetic electronic device and manufacturing method thereofNAT UNIV TSING HUA·Filed 2015·Granted Oct 11, 2016·0 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →