Inventor · disambiguated record
Michael Patrick Clinton
Also filed as: CLINTON MICHAEL · CLINTON MICHAEL P · CLINTON MICHAEL PATRICK
29 granted patents·4 pending applications·443 citations·filing 1993–2024
97Inventor score
Files withTEXAS INSTRUMENTS INC11TAIWAN SEMICONDUCTOR MFG CO LTD7CLINTON MICHAEL PATRICK4IBM4BARTLING STEVEN CRAIG1
Top patents by PatentIndex Score
33 records- 0197US8717800B2Method and apparatus pertaining to a ferroelectric random access memoryCLINTON MICHAEL PATRICK·Filed 2011·Granted May 6, 2014·59 cites·6 claims
- 0297US8508974B2Ferroelectric memory with shunt deviceCLINTON MICHAEL PATRICK·Filed 2011·Granted Aug 13, 2013·60 cites·13 claims
- 0394US9236113B2Read assist for an SRAM using a word line suppression circuitTEXAS INSTRUMENTS INC·Filed 2014·Granted Jan 12, 2016·17 cites·3 claims
- 0494US7733686B2Pulse width control for read and write assist for SRAM circuitsTEXAS INSTRUMENTS INC·Filed 2007·Granted Jun 8, 2010·38 cites·20 claims
- 0592US7936624B2Reduced power bitline precharge scheme for low power applications in memory devicesTEXAS INSTRUMENTS INC·Filed 2007·Granted May 3, 2011·26 cites·20 claims
- 0691US9082507B2Read assist circuit for an SRAM, including a word line suppression circuitTEXAS INSTRUMENTS INC·Filed 2014·Granted Jul 14, 2015·11 cites·7 claims
- 0790US8755239B2Read assist circuit for an SRAMHOLLA LAKSHMIKANTHA V·Filed 2011·Granted Jun 17, 2014·16 cites·9 claims
- 0890US7864600B2Memory cell employing reduced voltageTEXAS INSTRUMENTS INC·Filed 2008·Granted Jan 4, 2011·18 cites·14 claims
- 0989US10867681B2SRAM memory having subarrays with common IO blockTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·10 cites·20 claims
- 1089US8248867B2Memory cell employing reduced voltageMIKAN JR DONALD GEORGE·Filed 2010·Granted Aug 21, 2012·14 cites·7 claims
- 1189US7512030B2Memory with low power mode for WRITETEXAS INSTRUMENTS INC·Filed 2006·Granted Mar 31, 2009·19 cites·18 claims
- 1288US8379465B2Combined write assist and retain-till-accessed memory array biasTEXAS INSTRUMENTS INC·Filed 2010·Granted Feb 19, 2013·13 cites·19 claims
- 1387US8477522B2Ferroelectric memory write-backCLINTON MICHAEL PATRICK·Filed 2011·Granted Jul 2, 2013·12 cites·13 claims
- 1487US8437214B2Memory cell employing reduced voltageMIKAN DONALD·Filed 2012·Granted May 7, 2013·11 cites·2 claims
- 1583US2025087258A1Turbo Mode SRAM for High PerformanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1677US8756558B2FRAM compiler and layoutTOOPS DAVID J·Filed 2012·Granted Jun 17, 2014·7 cites·15 claims
- 1776US7671663B2Tunable voltage controller for a sub-circuit and method of operating the sameTEXAS INSTRUMENTS INC·Filed 2006·Granted Mar 2, 2010·9 cites·38 claims
- 1874US12183429B2Turbo mode SRAM for high performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 31, 2024·0 cites·20 claims
- 1972US6330697B1Apparatus and method for performing a defect leakage screen test for memory devicesIBM·Filed 1999·Granted Dec 11, 2001·36 cites·35 claims
- 2071US8331187B2Memory with low power mode for writeHOUSTON THEODORE W·Filed 2009·Granted Dec 11, 2012·6 cites·15 claims
- 2171US5412613AMemory device having asymmetrical CAS to data input/output mapping and applications thereofIBM·Filed 1993·Granted May 2, 1995·30 cites·15 claims
- 2267US8995164B2High-performance scalable read-only-memory cellTEXAS INSTRUMENTS INC·Filed 2013·Granted Mar 31, 2015·3 cites·19 claims
- 2360US5898623AInput port switching protocol for a random access memoryIBM·Filed 1997·Granted Apr 27, 1999·18 cites·13 claims
- 2454US8724367B2Method and apparatus pertaining to a ferroelectric random access memoryCLINTON MICHAEL PATRICK·Filed 2011·Granted May 13, 2014·1 cites·7 claims
- 2554US2021134371A1Sram memory having subarrays with common io blockTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Application pending·0 cites
- 2648US7974144B2Memory with tunable sleep diodesTEXAS INSTRUMENTS INC·Filed 2007·Granted Jul 5, 2011·1 cites·17 claims
- 2747US11393514B2Turbo mode SRAM for high performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 19, 2022·0 cites·20 claims
- 2844US9959916B2Dual rail memory, memory macro and associated hybrid power supply methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 1, 2018·0 cites·20 claims
- 2942US9666253B2Dual rail memory, memory macro and associated hybrid power supply methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 30, 2017·0 cites·19 claims
- 3038US2012168837A1Ferroelectric Memory Electrical ContactBARTLING STEVEN CRAIG·Filed 2011·Application pending·0 cites
- 3136US5969997ANarrow data width DRAM with low latency page-hit operationsIBM·Filed 1997·Granted Oct 19, 1999·8 cites·17 claims
- 3233US2007081379A1Write assist for latch and memory circuitsTEXAS INSTRUMENTS INC·Filed 2005·Application pending·0 cites
- 3328US8266464B2Power controller, a method of operating the power controller and a semiconductor memory system employing the sameCLINTON MICHAEL P·Filed 2007·Granted Sep 11, 2012·0 cites·14 claims
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