Inventor · disambiguated record
William H. Speece
Also filed as: SPEECE WILLIAM H · SPEECE WILLIAM HERMAN
10 granted patents·415 citations·filing 1991–2004
92Inventor score
Top patents by PatentIndex Score
10 records- 0189US5362667ABonded wafer processingHARRIS CORP·Filed 1992·Granted Nov 8, 1994·93 cites·26 claims
- 0284US6255195B1Method for forming a bonded substrate containing a planar intrinsic gettering zone and substrate formed by said methodINTERSIL CORP·Filed 1999·Granted Jul 3, 2001·66 cites·23 claims
- 0380US5728624ABonded wafer processingHARRIS CORP·Filed 1995·Granted Mar 17, 1998·52 cites·11 claims
- 0480US5517047ABonded wafer processingHARRIS CORP·Filed 1994·Granted May 14, 1996·53 cites·5 claims
- 0580USH1435HSOI CMOS device having body extension for providing sidewall channel stop and bodytieCHERNE RICHARD D·Filed 1991·Granted May 2, 1995·72 cites·3 claims
- 0667US6825532B2Bonded substrate for an integrated circuit containing a planar intrinsic gettering zoneINTERSIL INC·Filed 2001·Granted Nov 30, 2004·12 cites·32 claims
- 0762US5293052ASOT CMOS device having differentially doped body extension for providing improved backside leakage channel stopHARRIS CORP·Filed 1992·Granted Mar 8, 1994·23 cites·17 claims
- 0855US7052973B2Bonded substrate for an integrated circuit containing a planar intrinsic gettering zoneINTERSIL INC·Filed 2004·Granted May 30, 2006·5 cites·18 claims
- 0951US5391903ASelective recrystallization to reduce P-channel transistor leakage in silicon-on-sapphire CMOS radiation hardened integrated circuitsHARRIS CORP·Filed 1993·Granted Feb 21, 1995·21 cites·7 claims
- 1047US5298434ASelective recrystallization to reduce P-channel transistor leakage in silicon-on-sapphire CMOS radiation hardened integrated circuitsHARRIS CORP·Filed 1992·Granted Mar 29, 1994·18 cites·3 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →