Inventor · disambiguated record
Arnd-Dietrich Weber
Also filed as: WEBER ARND-DIETRICH
8 granted patents·5 pending applications·6 citations·filing 2018–2024
76Inventor score
Top patents by PatentIndex Score
13 records- 0192US11236438B2Silicon carbide substrate and method of growing SiC single crystal boulesSICRYSTAL GMBH·Filed 2018·Granted Feb 1, 2022·4 cites·5 claims
- 0273US11781245B2Silicon carbide substrate and method of growing SiC single crystal boulesSICRYSTAL GMBH·Filed 2021·Granted Oct 10, 2023·0 cites·6 claims
- 0369US11041254B2Chamfered silicon carbide substrate and method of chamferingSICRYSTAL GMBH·Filed 2019·Granted Jun 22, 2021·1 cites·18 claims
- 0466US11624124B2Silicon carbide substrate and method of growing SiC single crystal boulesSICRYSTAL GMBH·Filed 2018·Granted Apr 11, 2023·1 cites·4 claims
- 0564US12460314B2Silicon carbide substrate and method of growing SiC single crystal boulesSICRYSTAL GMBH·Filed 2023·Granted Nov 4, 2025·0 cites·15 claims
- 0664US2024318352A1Method and apparatus for the thermal post-treatment of at least one sic volume monocrystalSICRYSTAL GMBH·Filed 2024·Application pending·0 cites
- 0762US2024003054A1Production method for an sic volume monocrystal of inhomogeneous screw dislocation distribution and sic substrateSICRYSTAL GMBH·Filed 2023·Application pending·0 cites
- 0862US2023416939A1Production method for an sic volume monocrystal of homogeneous screw dislocation distribution and sic substrateSICRYSTAL GMBH·Filed 2023·Application pending·0 cites
- 0945US2023349071A1Crystal Structure Orientation in Semiconductor Semi-Finished Products and Semiconductor Substrates for Fissure Reduction and Method of Setting SameSICRYSTAL GMBH·Filed 2021·Application pending·0 cites
- 1042US11261536B2Production method and growth arrangement for producing a bulk SiC single crystal by arranging at least two insulation cylinder components to control a variation in a volume element densitySI CRYSTAL GMBH·Filed 2020·Granted Mar 1, 2022·0 cites·21 claims
- 1141US12195878B2SiC crystals with an optimal orientation of lattice planes for fissure reduction and method of producing sameSICRYSTAL GMBH·Filed 2021·Granted Jan 14, 2025·0 cites·14 claims
- 1240US11515140B2Chamfered silicon carbide substrate and method of chamferingSICRYSTAL GMBH·Filed 2019·Granted Nov 29, 2022·0 cites·6 claims
- 1339US2022025545A1Sic crystalline substrates with an optimal orientation of lattice planes for fissure reduction and method of producing sameSICRYSTAL GMBH·Filed 2021·Application pending·0 cites
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