Inventor · disambiguated record
Kuninori Kitahara
Also filed as: KITAHARA KUNINORI
11 granted patents·756 citations·filing 1989–2021
93Inventor score
Top patents by PatentIndex Score
11 records- 0197US5484664AHetero-epitaxially grown compound semiconductor substrateFUJITSU LTD·Filed 1994·Granted Jan 16, 1996·294 cites·4 claims
- 0294US5130269AHetero-epitaxially grown compound semiconductor substrate and a method of growing the sameFUJITSU LTD·Filed 1989·Granted Jul 14, 1992·108 cites·4 claims
- 0392US5300186AHetero-epitaxially grown compound semiconductor substrate and a method of growing the sameFUJITSU LTD·Filed 1992·Granted Apr 5, 1994·132 cites·6 claims
- 0487US6335266B1Hydrogen-doped polycrystalline group IV-based TFT having a larger number of monohydride-IV bonds than higher order-IV bondsFUJITSU LTD·Filed 2000·Granted Jan 1, 2002·38 cites·9 claims
- 0585US6660085B2Polycrystal thin film forming method and forming systemFUJITSU LTD·Filed 2001·Granted Dec 9, 2003·29 cites·6 claims
- 0679US6566754B2Polycrystalline semiconductor device and its manufacture methodFUJITSU LTD·Filed 2001·Granted May 20, 2003·19 cites·12 claims
- 0776US6287944B1Polycrystalline semiconductor device and its manufacture methodFUJITSU LTD·Filed 1999·Granted Sep 11, 2001·41 cites·16 claims
- 0875US5970369ASemiconductor device with polysilicon layer of good crystallinity and its manufacture methodFUJITSU LTD·Filed 1997·Granted Oct 19, 1999·46 cites·6 claims
- 0972US6255148B1Polycrystal thin film forming method and forming systemFUJITSU LTD·Filed 1999·Granted Jul 3, 2001·34 cites·10 claims
- 1048US12364063B2Photoelectric conversion deviceS NANOTECH CO CREATION CO LTD·Filed 2021·Granted Jul 15, 2025·0 cites·7 claims
- 1148US6159854AProcess of growing conductive layer from gas phaseFUJITSU LTD·Filed 1995·Granted Dec 12, 2000·15 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →