Inventor · disambiguated record
John E. Berg
Also filed as: BERG JOHN · BERG JOHN E · BERG JOHN EUGENE
23 granted patents·2 pending applications·514 citations·filing 1987–2023
96Inventor score
Top patents by PatentIndex Score
25 records- 0198US11493714B1Quantum computing die assembly with thru-silicon vias and connected logic circuitPSIQUANTUM CORP·Filed 2021·Granted Nov 8, 2022·51 cites·20 claims
- 0296US11892693B1Photonic quantum computer assemblyPSIQUANTUM CORP·Filed 2022·Granted Feb 6, 2024·2 cites·11 claims
- 0396US11550108B1Quantum computing die assembly with thru-silicon viasPSIQUANTUM CORP·Filed 2021·Granted Jan 10, 2023·3 cites·20 claims
- 0496US11493713B1Photonic quantum computer assembly having dies with specific contact configuration and matched CTEPSIQUANTUM CORP·Filed 2019·Granted Nov 8, 2022·11 cites·16 claims
- 0594US12242123B1Photonic quantum computer assembly with a quantum computing die facing an electronic circuit diePSIQUANTUM CORP·Filed 2023·Granted Mar 4, 2025·1 cites·18 claims
- 0690US8913402B1Triple-damascene interposerBERG JOHN E·Filed 2011·Granted Dec 16, 2014·16 cites·14 claims
- 0790US6190973B1Method of fabricating a high quality thin oxideZILOG INC·Filed 1998·Granted Feb 20, 2001·97 cites·28 claims
- 0890US5978127ALight phase grating deviceZILOG INC·Filed 1997·Granted Nov 2, 1999·98 cites·16 claims
- 0989US6165846AMethod of eliminating gate leakage in nitrogen annealed oxidesZILOG INC·Filed 1999·Granted Dec 26, 2000·90 cites·42 claims
- 1086US11680337B2Fabrication of films having controlled stoichiometry using molecular beam epitaxyPSIQUANTUM CORP·Filed 2021·Granted Jun 20, 2023·2 cites·20 claims
- 1180US7274064B2Non-volatile electromechanical field effect devices and circuits using same and methods of forming sameNANTERO INC·Filed 2004·Granted Sep 25, 2007·21 cites·17 claims
- 1278US12037700B2Fabrication of films having controlled stoichiometry using molecular beam epitaxyPSIQUANTUM CORP·Filed 2023·Granted Jul 16, 2024·0 cites·17 claims
- 1372US6436195B1Method of fabricating a MOS deviceZILOG INC·Filed 2000·Granted Aug 20, 2002·11 cites·4 claims
- 1472US4895520AMethod of fabricating a submicron silicon gate MOSFETg21 which has a self-aligned threshold implantSTANDARD MICROSYST SMC·Filed 1989·Granted Jan 23, 1990·28 cites·14 claims
- 1567US4824803AMultilayer metallization method for integrated circuitsSTANDARD MICROSYST SMC·Filed 1987·Granted Apr 25, 1989·43 cites·4 claims
- 1662US7943464B2Non-volatile electromechanical field effect devices and circuits using same and methods of forming sameNANTERO INC·Filed 2009·Granted May 17, 2011·3 cites·13 claims
- 1759US6476635B1Programmable number of metal lines and effective metal width along critical paths in a programmable logic deviceCYPRESS SEMICONDUCTOR CORP·Filed 2000·Granted Nov 5, 2002·8 cites·19 claims
- 1856US7595527B2Non-volatile electromechanical field effect devices and circuits using same and methods of forming sameNANTERO INC·Filed 2007·Granted Sep 29, 2009·2 cites·13 claims
- 1948US6156653AMethod of fabricating a MOS deviceZILOG INC·Filed 1997·Granted Dec 5, 2000·10 cites·15 claims
- 2041US2002168855A1Method of fabricating a MOS deviceFiled 2002·Application pending·0 cites
- 2136US5631180AMethod of fabricating high threshold metal oxide silicon read-only-memory transistorsZILOG INC·Filed 1995·Granted May 20, 1997·6 cites·22 claims
- 2236US5353720ARefuse incineratorBERG JOHN E·Filed 1993·Granted Oct 11, 1994·7 cites·13 claims
- 2336US2009075698A1Removable Card And A Mobile Wireless Communication DeviceDING ZHIMIN·Filed 2007·Application pending·0 cites
- 2432US5389565AMethod of fabricating high threshold metal oxide silicon read-only-memory transistorsZILOG INC·Filed 1994·Granted Feb 14, 1995·3 cites·14 claims
- 2527US5498896AHigh threshold metal oxide silicon read-only-memory transistorsZILOG INC·Filed 1994·Granted Mar 12, 1996·1 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →