Inventor · disambiguated record
Masato Irikura
Also filed as: IRIKURA MASATO
13 granted patents·5 pending applications·58 citations·filing 2003–2013
90Inventor score
Files withSUMITOMO ELECTRIC INDUSTRIES13ISHIBASHI KEIJI3ITAMI WORKS OF SUMITOMO ELECTRIC IND LTD1NAKAYAMA MASAHIRO1
Top patents by PatentIndex Score
18 records- 0188US7550780B2Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor waferSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Jun 23, 2009·9 cites·2 claims
- 0286US7901960B2Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Granted Mar 8, 2011·8 cites·7 claims
- 0382US7851381B2Surface treatment method for nitride crystal, nitride crystal substrate, nitride crystal substrate with epitaxial layer and semiconductor device, and method of manufacturing nitride crystal substrate with epitaxial layer and semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Granted Dec 14, 2010·8 cites·15 claims
- 0474US7195545B2Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor waferSUMITOMO ELECTRIC INDUSTRIES·Filed 2003·Granted Mar 27, 2007·11 cites·2 claims
- 0573US8022438B2Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor waferSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Sep 20, 2011·2 cites·4 claims
- 0672US8482032B2Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor waferNAKAYAMA MASAHIRO·Filed 2011·Granted Jul 9, 2013·2 cites·4 claims
- 0772US7154131B2Nitride semiconductor substrate and method of producing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2004·Granted Dec 26, 2006·12 cites·3 claims
- 0871US7662239B2Method of producing group 3 nitride substrate wafers and group 3 nitride substrate wafersSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Granted Feb 16, 2010·3 cites·20 claims
- 0969US7919343B2Group III nitride crystal and method for surface treatment thereof, group III nitride stack and manufacturing method thereof, and group III nitride semiconductor device and manufacturing method thereofSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Apr 5, 2011·3 cites·13 claims
- 1053US8101968B2Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor deviceISHIBASHI KEIJI·Filed 2011·Granted Jan 24, 2012·0 cites·6 claims
- 1151US8723219B2Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor waferITAMI WORKS OF SUMITOMO ELECTRIC IND LTD·Filed 2013·Granted May 13, 2014·0 cites·4 claims
- 1250US7390747B2Nitride semiconductor substrate and method of producing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2005·Granted Jun 24, 2008·0 cites·2 claims
- 1350US2012094473A1Group iii nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor deviceISHIBASHI KEIJI·Filed 2011·Application pending·0 cites
- 1448US2009127564A1GaN Substrate Manufacturing Method, GaN Substrate, and Semiconductor DeviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Application pending·0 cites
- 1547US2011146565A1Group iii nitride crystal and method for surface treatment thereof, group iii nitride stack and manufacturing method thereof, and group iii nitride semiconductor device and manufacturing method thereofSUMITOMO ELECTRIC INDUSTRIES·Filed 2011·Application pending·0 cites
- 1646US2008057608A1Manufacturing method of group III nitride substrate, group III nitride substrate, group III nitride substrate with epitaxial layer, manufacturing method of group III nitride substrate with epitaxial layer, and manufacturing method of group III nitride deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Application pending·0 cites
- 1746US2010013058A1Semiconductor Wafer and Semiconductor Wafer Inspection MethodSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Application pending·0 cites
- 1844US8283694B2GaN substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor deviceISHIBASHI KEIJI·Filed 2011·Granted Oct 9, 2012·0 cites·6 claims
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