Inventor · disambiguated record
Lori A. Lipkin
Also filed as: LIPKIN LORI A
11 granted patents·871 citations·filing 1995–2003
94Inventor score
Top patents by PatentIndex Score
11 records- 0197US5972801AProcess for reducing defects in oxide layers on silicon carbideCREE RESEARCH INC·Filed 1995·Granted Oct 26, 1999·195 cites·34 claims
- 0296US6246076B1Layered dielectric on silicon carbide semiconductor structuresCREE INC·Filed 1998·Granted Jun 12, 2001·142 cites·20 claims
- 0394US6956238B2Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channelCREE INC·Filed 2001·Granted Oct 18, 2005·90 cites·44 claims
- 0494US6767843B2Method of N2O growth of an oxide layer on a silicon carbide layerCREE INC·Filed 2001·Granted Jul 27, 2004·94 cites·28 claims
- 0594US6344663B1Silicon carbide CMOS devicesCREE INC·Filed 1996·Granted Feb 5, 2002·140 cites·18 claims
- 0693US6610366B2Method of N2O annealing an oxide layer on a silicon carbide layerCREE INC·Filed 2001·Granted Aug 26, 2003·94 cites·34 claims
- 0787US6972436B2High voltage, high temperature capacitor and interconnection structuresCREE INC·Filed 2001·Granted Dec 6, 2005·39 cites·37 claims
- 0884US6437371B2Layered dielectric on silicon carbide semiconductor structuresCREE INC·Filed 2001·Granted Aug 20, 2002·29 cites·2 claims
- 0975US6528373B2Layered dielectric on silicon carbide semiconductor structuresCREE INC·Filed 2002·Granted Mar 4, 2003·25 cites·30 claims
- 1073US6998322B2Methods of fabricating high voltage, high temperature capacitor and interconnection structuresCREE INC·Filed 2003·Granted Feb 14, 2006·16 cites·19 claims
- 1160US7067176B2Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environmentCREE INC·Filed 2001·Granted Jun 27, 2006·7 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →