Inventor · disambiguated record
Frank Baiocchi
Also filed as: BAIOCCHI FRANK · BAIOCCHI FRANK A · BAIOCCHI FRANK ALEXANDER
25 granted patents·7 pending applications·132 citations·filing 2003–2020
94Inventor score
Files withTEXAS INSTRUMENTS INC13AGERE SYSTEMS INC6BAIOCCHI FRANK A4AMIN AHMED2CICLON SEMICONDUCTOR DEVICE CO2
Top patents by PatentIndex Score
32 records- 0191US10581426B1Source down power FET with integrated temperature sensorTEXAS INSTRUMENTS INC·Filed 2019·Granted Mar 3, 2020·8 cites·20 claims
- 0291US8766436B2Moisture barrier for a wire bondDELUCCA JOHN M·Filed 2011·Granted Jul 1, 2014·37 cites·17 claims
- 0388US7291849B1Calibration standard for transmission electron microscopyAGERE SYSTEMS INC·Filed 2005·Granted Nov 6, 2007·13 cites·12 claims
- 0487US7126193B2Metal-oxide-semiconductor device with enhanced source electrodeCICLON SEMICONDUCTOR DEVICE CO·Filed 2003·Granted Oct 24, 2006·38 cites·14 claims
- 0576US9853144B2Power MOSFET with metal filled deep source contactTEXAS INSTRUMENTS INC·Filed 2016·Granted Dec 26, 2017·3 cites·22 claims
- 0673US10068977B2Power MOSFET with a deep source contactTEXAS INSTRUMENTS INC·Filed 2017·Granted Sep 4, 2018·1 cites·12 claims
- 0770US10826487B2Power unit with an integrated pull-down transistorTEXAS INSTRUMENTS INC·Filed 2017·Granted Nov 3, 2020·2 cites·15 claims
- 0870US8242378B2Soldering method and related device for improved resistance to brittle fracture with an intermetallic compound region coupling a solder mass to an Ni layer which has a low concentration of P, wherein the amount of P in the underlying Ni layer is controlled as a function of the expected volume of the solder massAMIN AHMED·Filed 2007·Granted Aug 14, 2012·7 cites·12 claims
- 0968US10804263B2Switching field plate power MOSFETTEXAS INSTRUMENTS INC·Filed 2016·Granted Oct 13, 2020·1 cites·19 claims
- 1065US7724359B2Method of making electronic entitiesAGERE SYSTEMS INC·Filed 2008·Granted May 25, 2010·2 cites·14 claims
- 1163US8318606B2Dielectric etchingBAIOCCHI FRANK·Filed 2009·Granted Nov 27, 2012·3 cites·20 claims
- 1263US6987052B2Method for making enhanced substrate contact for a semiconductor deviceAGERE SYSTEMS INC·Filed 2003·Granted Jan 17, 2006·12 cites·16 claims
- 1362US10812064B2Source down power FET with integrated temperature sensorTEXAS INSTRUMENTS INC·Filed 2020·Granted Oct 20, 2020·0 cites·21 claims
- 1462US10529706B2Integrated transistor and protection diode and fabrication methodTEXAS INSTRUMENTS INC·Filed 2019·Granted Jan 7, 2020·0 cites·14 claims
- 1561US10529705B2Integrated transistor and protection diode and fabrication methodTEXAS INSTRUMENTS INC·Filed 2019·Granted Jan 7, 2020·0 cites·9 claims
- 1656US10319712B2Integrated transistor and protection diode and fabrication methodTEXAS INSTRUMENTS INC·Filed 2017·Granted Jun 11, 2019·0 cites·14 claims
- 1752US9136245B2Moisture barrier for a wire bondLSI CORP·Filed 2014·Granted Sep 15, 2015·0 cites·20 claims
- 1852US7041561B2Enhanced substrate contact for a semiconductor deviceAGERE SYSTEMS INC·Filed 2004·Granted May 9, 2006·5 cites·19 claims
- 1951US11195915B2Semiconductor devices with a sloped surfaceTEXAS INSTRUMENTS INC·Filed 2019·Granted Dec 7, 2021·0 cites·19 claims
- 2050US10746890B2Power MOSFET with a deep source contactTEXAS INSTRUMENTS INC·Filed 2018·Granted Aug 18, 2020·0 cites·20 claims
- 2149US8610215B2Allotropic or morphologic change in silicon induced by electromagnetic radiation for resistance turning of integrated circuitsBAIOCCHI FRANK A·Filed 2008·Granted Dec 17, 2013·0 cites·8 claims
- 2249US8101871B2Aluminum bond pads with enhanced wire bond stabilityBAIOCCHI FRANK A·Filed 2009·Granted Jan 24, 2012·0 cites·27 claims
- 2348US7972873B2Material removing processes in device formation and the devices formed therebyAGERE SYSTEMS INC·Filed 2008·Granted Jul 5, 2011·0 cites·18 claims
- 2447US10707344B2Power MOSFET with metal filled deep source contactTEXAS INSTRUMENTS INC·Filed 2017·Granted Jul 7, 2020·0 cites·20 claims
- 2546US2010319967A1Inhibition of copper dissolution for lead-free solderingAGERE SYSTEMS INC·Filed 2007·Application pending·0 cites
- 2645US2007007593A1Metal-oxide-semiconductor device with enhanced source electrodeCICLON SEMICONDUCTOR DEVICE CO·Filed 2006·Application pending·0 cites
- 2742US2012111927A1Aluminum bond pads with enhanced wire bond stabilityBAIOCCHI FRANK A·Filed 2012·Application pending·0 cites
- 2841US9646965B2Monolithically integrated transistors for a buck converter using source down MOSFETTEXAS INSTRUMENTS INC·Filed 2015·Granted May 9, 2017·0 cites·9 claims
- 2941US2009029490A1Method of fabricating an electronic deviceBAIOCCHI FRANK A·Filed 2008·Application pending·0 cites
- 3038US2012280023A1Soldering method and related device for improved resistance to brittle fractureAMIN AHMED·Filed 2012·Application pending·0 cites
- 3136US2012204941A1Allotropic changes in si and use in fabricating materials for solar cellsCARGO JAMES T·Filed 2011·Application pending·0 cites
- 3228US2012033479A1Modification of logic by morphological manipulation of a semiconductor resistive elementDELUCCA JOHN M·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →