Inventor · disambiguated record
Alvin M. Goodman
Also filed as: GOODMAN ALVIN M · GOODMAN ALVIN MALCOLM
21 granted patents·875 citations·filing 1976–1991
97Inventor score
Top patents by PatentIndex Score
21 records- 0196US5311055ATrenched bipolar transistor structuresUS ARMY·Filed 1991·Granted May 10, 1994·164 cites·19 claims
- 0295US4455565AVertical MOSFET with an aligned gate electrode and aligned drain shield electrodeRCA CORP·Filed 1981·Granted Jun 19, 1984·113 cites·5 claims
- 0395US4199773AInsulated gate field effect silicon-on-sapphire transistor and method of making sameRCA CORP·Filed 1978·Granted Apr 22, 1980·71 cites·10 claims
- 0494US4587713AMethod for making vertical MOSFET with reduced bipolar effectsRCA CORP·Filed 1984·Granted May 13, 1986·80 cites·7 claims
- 0593US4837606AVertical MOSFET with reduced bipolar effectsGEN ELECTRIC·Filed 1987·Granted Jun 6, 1989·88 cites·5 claims
- 0691US4333051AMethod and apparatus for determining minority carrier diffusion length in semiconductorsRCA CORP·Filed 1980·Granted Jun 1, 1982·56 cites·25 claims
- 0784US4598249AMethod using surface photovoltage (SPV) measurements for revealing heavy metal contamination of semiconductor materialRCA CORP·Filed 1984·Granted Jul 1, 1986·42 cites·18 claims
- 0879US4551643APower switching circuitryRCA CORP·Filed 1983·Granted Nov 5, 1985·22 cites·4 claims
- 0978US4106107AMIS readout device with dielectric storage mediumRCA CORP·Filed 1977·Granted Aug 8, 1978·18 cites·10 claims
- 1077US4766482ASemiconductor device and method of making the sameGEN ELECTRIC·Filed 1986·Granted Aug 23, 1988·47 cites·5 claims
- 1172US4684413AMethod for increasing the switching speed of a semiconductor device by neutron irradiationRCA CORP·Filed 1985·Granted Aug 4, 1987·39 cites·11 claims
- 1270US4091527AMethod for adjusting the leakage current of silicon-on-sapphire insulated gate field effect transistorsRCA CORP·Filed 1977·Granted May 30, 1978·25 cites·12 claims
- 1364US4567431AMethod for revealing semiconductor surface damage using surface photovoltage (SPV) measurementsRCA CORP·Filed 1983·Granted Jan 28, 1986·16 cites·10 claims
- 1464US4396438AMethod of making CCD imagersRCA CORP·Filed 1981·Granted Aug 2, 1983·21 cites·7 claims
- 1564US4344985AMethod of passivating a semiconductor device with a multi-layer passivant system by thermally growing a layer of oxide on an oxygen doped polycrystalline silicon layerRCA CORP·Filed 1981·Granted Aug 17, 1982·25 cites·8 claims
- 1644US4507334ASurface preparation for determining diffusion length by the surface photovoltage methodRCA CORP·Filed 1983·Granted Mar 26, 1985·11 cites·4 claims
- 1743US4489103ASIPOS Deposition methodRCA CORP·Filed 1983·Granted Dec 18, 1984·13 cites·4 claims
- 1841US4050018ACapacitance meter bias protection circuitRCA CORP·Filed 1976·Granted Sep 20, 1977·5 cites·7 claims
- 1939US4433469AMethod of forming a self aligned aluminum polycrystalline silicon lineRCA CORP·Filed 1983·Granted Feb 28, 1984·8 cites·9 claims
- 2039US4380773ASelf aligned aluminum polycrystalline silicon contactRCA CORP·Filed 1980·Granted Apr 19, 1983·8 cites·11 claims
- 2133US4998156AStructure for a complementary-symmetry COMFET pairGEN ELECTRIC·Filed 1988·Granted Mar 5, 1991·3 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →