Inventor · disambiguated record
Jean-Pierre Colinge
Also filed as: COLINGE JEAN P · COLINGE JEAN-PIERRE
160 granted patents·7 pending applications·4,401 citations·filing 1985–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD118TAIWAN SEMICONDUCTOR MFG29COMMISSARIAT ENERGIE ATOMIQUE10COLINGE JEAN-PIERRE4HEWLETT PACKARD CO2
Top patents by PatentIndex Score
167 records- 0199US9899398B1Non-volatile memory device having nanocrystal floating gate and method of fabricating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 20, 2018·148 cites·20 claims
- 0299US9786774B2Metal gate of gate-all-around transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 10, 2017·132 cites·20 claims
- 0399US9419003B1Semiconductor devices and methods of manufacture thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 16, 2016·50 cites·20 claims
- 0499US9412828B2Aligned gate-all-around structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 9, 2016·749 cites·19 claims
- 0599US9209247B2Self-aligned wrapped-around structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 8, 2015·782 cites·20 claims
- 0699US9184269B2Silicon and silicon germanium nanowire formationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 10, 2015·39 cites·20 claims
- 0799US8772109B2Apparatus and method for forming semiconductor contactsTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jul 8, 2014·1.3k cites·12 claims
- 0898US11929417B2Contacts for highly scaled transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 12, 2024·2 cites·20 claims
- 0998US11404325B2Silicon and silicon germanium nanowire formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·5 cites·20 claims
- 1098US9853150B1Method of fabricating epitaxial gate dielectrics and semiconductor device of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 26, 2017·46 cites·20 claims
- 1198US9634091B2Silicon and silicon germanium nanowire formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 25, 2017·28 cites·20 claims
- 1298US9478624B2Self-aligned wrapped-around structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 25, 2016·31 cites·20 claims
- 1398US9425324B2Semiconductor device and channel structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 23, 2016·38 cites·16 claims
- 1498US9006786B2Fin structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 14, 2015·48 cites·20 claims
- 1598US6359311B1Quasi-surrounding gate and a method of fabricating a silicon-on-insulator semiconductor device with the sameTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Mar 19, 2002·179 cites·2 claims
- 1697US11777009B2Contacts for highly scaled transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 3, 2023·2 cites·20 claims
- 1797US10163729B2Silicon and silicon germanium nanowire formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 25, 2018·14 cites·20 claims
- 1897US9935016B2Silicon and silicon germanium nanowire formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 3, 2018·15 cites·20 claims
- 1997US9660107B13D cross-bar nonvolatile memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 23, 2017·14 cites·20 claims
- 2097US9196730B1Variable channel strain of nanowire transistors to improve drive currentTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 24, 2015·29 cites·17 claims
- 2197US9006842B2Tuning strain in semiconductor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 14, 2015·26 cites·20 claims
- 2297US8815691B2Method of fabricating a gate all around deviceTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Aug 26, 2014·37 cites·20 claims
- 2397US6391752B1Method of fabricating a silicon-on-insulator semiconductor device with an implanted ground planeTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted May 21, 2002·159 cites·11 claims
- 2496US10157928B2Semiconductor devices and methods of manufacture thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·9 cites·20 claims
- 2596US9941374B2Contacts for highly scaled transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 10, 2018·10 cites·20 claims
- 2696US9691695B2Monolithic 3D integration inter-tier vias insertion scheme and associated layout structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 27, 2017·13 cites·20 claims
- 2796US9508858B2Contacts for highly scaled transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 29, 2016·11 cites·20 claims
- 2896US8178862B2Junctionless metal-oxide-semiconductor transistorCOLINGE JEAN-PIERRE·Filed 2010·Granted May 15, 2012·37 cites·40 claims
- 2995US10497792B2Contacts for highly scaled transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 3, 2019·6 cites·20 claims
- 3095US10134915B22-D material transistor with vertical structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 20, 2018·9 cites·21 claims
- 3195US9653604B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 16, 2017·8 cites·20 claims
- 3295US9564493B2Devices having a semiconductor material that is semimetal in bulk and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 7, 2017·8 cites·20 claims
- 3394US11961892B2Contacts for highly scaled transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·1 cites·20 claims
- 3494US10943833B2Silicon and silicon germanium nanowire formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 9, 2021·5 cites·20 claims
- 3594US10191694B23D cross-bar nonvolatile memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 29, 2019·6 cites·20 claims
- 3694US10170404B2Monolithic 3D integration inter-tier vias insertion scheme and associated layout structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 1, 2019·8 cites·20 claims
- 3794US9893189B2Method for reducing contact resistance in semiconductor structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 13, 2018·7 cites·20 claims
- 3893US11276763B2Contacts for highly scaled transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 15, 2022·4 cites·20 claims
- 3993US9875902B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 23, 2018·5 cites·20 claims
- 4093US9764950B2Semiconductor arrangement with one or more semiconductor columnsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 19, 2017·9 cites·20 claims
- 4193US9466668B2Inducing localized strain in vertical nanowire transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 11, 2016·9 cites·20 claims
- 4293US9219115B2Forming conductive STI liners for FinFETSTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 22, 2015·11 cites·20 claims
- 4393US9177924B2Vertical nanowire transistor for input/output structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 3, 2015·10 cites·20 claims
- 4492US9490348B2Method of forming a FinFET having an oxide region in the source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Nov 8, 2016·8 cites·20 claims
- 4592US9006829B2Aligned gate-all-around structureCOLINGE JEAN-PIERRE·Filed 2012·Granted Apr 14, 2015·14 cites·19 claims
- 4692US8823060B1Method for inducing strain in FinFET channelsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 2, 2014·14 cites·19 claims
- 4791US9825043B2Semiconductor devices and methods of manufacture thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 21, 2017·5 cites·20 claims
- 4891US9680012B1Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 13, 2017·7 cites·20 claims
- 4991US9653457B2Stacked device and associated layout structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 16, 2017·7 cites·20 claims
- 5090US9673209B2Memory device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jun 6, 2017·6 cites·20 claims
Showing the top 50 of 167 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →