Inventor · disambiguated record
Woo Chul Jeon
Also filed as: JEON WOO CHUL
36 granted patents·10 pending applications·149 citations·filing 2009–2014
96Inventor score
Files withSAMSUNG ELECTRONICS CO LTD20JEON WOO CHUL11SAMSUNG ELECTRO MECH9PARK YOUNG HWAN4PARK KI YEOL2
Top patents by PatentIndex Score
46 records- 0194US8525231B2Semiconductor device and method of manufacturing the samePARK KI YEOL·Filed 2010·Granted Sep 3, 2013·29 cites·30 claims
- 0293US8860089B2High electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Oct 14, 2014·15 cites·21 claims
- 0389US8525227B2Semiconductor device and method of manufacturing the sameJEON WOO CHUL·Filed 2010·Granted Sep 3, 2013·12 cites·20 claims
- 0489US8384130B2Nitride semiconductor device having a two-dimensional electron gas (2DEG) channelSAMSUNG ELECTRO MECH·Filed 2011·Granted Feb 26, 2013·8 cites·17 claims
- 0586US9231093B2High electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jan 5, 2016·8 cites·26 claims
- 0686US9053964B2Semiconductor devices including a first and second HFET and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jun 9, 2015·8 cites·25 claims
- 0786US8716754B2Nitride semiconductor devicePARK YOUNG HWAN·Filed 2012·Granted May 6, 2014·8 cites·9 claims
- 0885US9245738B2High electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jan 26, 2016·6 cites·16 claims
- 0983US8772834B2High electron mobility transistor and method of driving the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 8, 2014·5 cites·39 claims
- 1081US8890212B2Normally-off high electron mobility transistorSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Nov 18, 2014·5 cites·18 claims
- 1178US8939696B2Automatic carrier transfer for transferring a substrate carrier in a semiconductor manufacturing post-process and method of transferring the substrate carrier using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Jan 27, 2015·4 cites·18 claims
- 1278US8501557B2Method of manufacturing nitride semiconductor deviceSAMSUNG ELECTRO MECH·Filed 2013·Granted Aug 6, 2013·3 cites·8 claims
- 1377US9306544B2Electronic device including transistor and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Apr 5, 2016·4 cites·36 claims
- 1476US8373245B22DEG Schottky diode formed in nitride material with a composite Schottky/ohmic electrode structure and method of making the sameSAMSUNG ELECTRO MECH·Filed 2010·Granted Feb 12, 2013·3 cites·7 claims
- 1575US9087704B2Semiconductor devices and methods of manufacturing the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 21, 2015·4 cites·44 claims
- 1674US8860087B2Nitride semiconductor device and manufacturing method thereofPARK YOUNG HWAN·Filed 2012·Granted Oct 14, 2014·3 cites·23 claims
- 1773US9147738B2High electron mobility transistor including plurality of gate electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 29, 2015·3 cites·27 claims
- 1871US9252255B2High electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Feb 2, 2016·2 cites·17 claims
- 1971US8933446B2High electron mobility transistors and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jan 13, 2015·2 cites·38 claims
- 2071US8896026B2Semicondutor deviceJEON WOO CHUL·Filed 2011·Granted Nov 25, 2014·3 cites·13 claims
- 2170US9082693B2Nitride semiconductor based power converting deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 14, 2015·2 cites·16 claims
- 2268US9379102B2Nitride-based semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jun 28, 2016·2 cites·6 claims
- 2366US9461637B2Method and apparatus for controlling a gate voltage in high electron mobility transistorSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Oct 4, 2016·2 cites·19 claims
- 2465US9231057B2Power switching device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jan 5, 2016·1 cites·11 claims
- 2565US8907377B2High electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Dec 9, 2014·1 cites·32 claims
- 2665US8319308B2Semiconductor device and method for manufacturing of the sameJEON WOO CHUL·Filed 2010·Granted Nov 27, 2012·2 cites·19 claims
- 2763US9570597B2High electron mobility transistorSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Feb 14, 2017·1 cites·13 claims
- 2860US9214517B2Semiconductor device using 2-dimensional electron gas and 2-dimensional hole gas and method of manufacturing the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Dec 15, 2015·1 cites·6 claims
- 2960US8373200B2Nitride based semiconductor device and method for manufacturing of the sameSAMSUNG ELECTRO MECH·Filed 2010·Granted Feb 12, 2013·1 cites·10 claims
- 3059US8735940B2Semiconductor device and method for manufacturing the sameJEON WOO CHUL·Filed 2010·Granted May 27, 2014·1 cites·30 claims
- 3152US8883599B22DEG Schottky diode formed in nitride material with a composite Schottky/ohmic electrode structure and method of making the sameSAMSUNG ELECTRO MECH·Filed 2012·Granted Nov 11, 2014·0 cites·3 claims
- 3249US2010244713A1Illumination apparatus using light emitting diodeSAMSUNG ELECTRO MECH·Filed 2009·Application pending·0 cites
- 3347US9209250B2High electron mobility transistors, methods of manufacturing the same, and electronic devices including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Dec 8, 2015·0 cites·21 claims
- 3445US8319309B2Semiconductor device and method for manufacturing of the sameJEON WOO CHUL·Filed 2010·Granted Nov 27, 2012·0 cites·34 claims
- 3545US2011057233A1Semiconductor component and method for manufacturing of the sameSAMSUNG ELECTRO MECH·Filed 2009·Application pending·0 cites
- 3644US8841704B2Nitride based semiconductor device and manufacturing method thereofPARK YOUNG HWAN·Filed 2012·Granted Sep 23, 2014·0 cites·5 claims
- 3741US2013009165A1Nitride semiconductor device, method for manufacturing the same and nitride semiconductor power deviceSAMSUNG ELECTRO MECH·Filed 2012·Application pending·0 cites
- 3840US2012267639A1Nitride semiconductor device and method for manufacturing the sameJEON WOO CHUL·Filed 2012·Application pending·0 cites
- 3939US8637902B2Semiconductor device and method of manufacturing the samePARK KI YEOL·Filed 2010·Granted Jan 28, 2014·0 cites·7 claims
- 4039US8426939B2Semiconductor device and method for manufacturing of the sameJEON WOO CHUL·Filed 2010·Granted Apr 23, 2013·0 cites·11 claims
- 4139US2013146888A1Monolithic semiconductor device and method for manufacturing the samePARK YOUNG HWAN·Filed 2012·Application pending·0 cites
- 4238US2012267687A1Nitride semiconductor device and manufacturing method thereofJEON WOO CHUL·Filed 2011·Application pending·0 cites
- 4338US2012267637A1Nitride semiconductor device and manufacturing method thereofJEON WOO CHUL·Filed 2011·Application pending·0 cites
- 4436US2012007053A1Nitride-based semiconductor device and method for manufacturing the sameJEON WOO CHUL·Filed 2010·Application pending·0 cites
- 4536US2011057257A1Semiconductor device and method for manufacturing the sameSAMSUNG ELECTRO MECH·Filed 2010·Application pending·0 cites
- 4636US2012007049A1Nitride-based semiconductor device and method for manufacturing the sameJEON WOO CHUL·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →