Inventor · disambiguated record
Lixin Ge
Also filed as: GE LIXIN
16 granted patents·11 pending applications·42 citations·filing 2006–2024
90Inventor score
Top patents by PatentIndex Score
27 records- 0191US9633996B1High density area efficient thin-oxide decoupling capacitor using conductive gate resistorQUALCOMM INC·Filed 2016·Granted Apr 25, 2017·8 cites·25 claims
- 0287US8980708B2Complementary back end of line (BEOL) capacitorQUALCOMM INC·Filed 2013·Granted Mar 17, 2015·8 cites·8 claims
- 0385US11296083B2Three-dimensional (3D), vertically-integrated field-effect transistors (FETs) electrically coupled by integrated vertical FET-to-FET interconnects for complementary metal-oxide semiconductor (CMOS) cell circuitsQUALCOMM INC·Filed 2020·Granted Apr 5, 2022·2 cites·26 claims
- 0481US9269492B2Bone frame, low resistance via coupled metal oxide-metal (MOM) orthogonal finger capacitorQUALCOMM INC·Filed 2013·Granted Feb 23, 2016·6 cites·22 claims
- 0580US9252104B2Complementary back end of line (BEOL) capacitorQUALCOMM INC·Filed 2014·Granted Feb 2, 2016·4 cites·12 claims
- 0678US9875788B2Low-power 5T SRAM with improved stability and reduced bitcell sizeJUNG SEONG-OOK·Filed 2010·Granted Jan 23, 2018·8 cites·26 claims
- 0777US10247617B2Middle-of-line (MOL) metal resistor temperature sensors for localized temperature sensing of active semiconductor areas in integrated circuits (ICs)QUALCOMM INC·Filed 2016·Granted Apr 2, 2019·2 cites·14 claims
- 0866US10333007B2Self-aligned contact (SAC) on gate for improving metal oxide semiconductor (MOS) varactor quality factorQUALCOMM INC·Filed 2017·Granted Jun 25, 2019·1 cites·19 claims
- 0964US7446001B2Method for forming a semiconductor-on-insulator (SOI) body-contacted device with a portion of drain region removedFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Nov 4, 2008·3 cites·18 claims
- 1061US10665678B2Transistor with fluorinated graphene spacerQUALCOMM INC·Filed 2019·Granted May 26, 2020·0 cites·12 claims
- 1161US2025293146A1Stacked metal-oxide-metal (mom) capacitor(s) in front side and back side metallization layer(s) of semiconductor die, and related integrated circuit (ic) packages and fabrication methodsQUALCOMM INC·Filed 2024·Application pending·0 cites
- 1258US2025185300A1Electronic devices employing thin-gate insulator transistors coupled to varactors to reduce gate-to-source/drain voltage to avoid voltage breakdown, and related fabrication methodsQUALCOMM INC·Filed 2023·Application pending·0 cites
- 1357US10263080B2Transistor with fluorinated graphene spacerQUALCOMM INC·Filed 2017·Granted Apr 16, 2019·0 cites·8 claims
- 1456US11973020B2Metal-insulator-metal capacitor with top contactQUALCOMM INC·Filed 2021·Granted Apr 30, 2024·0 cites·30 claims
- 1553US2019195700A1MIDDLE-OF-LINE (MOL) METAL RESISTOR TEMPERATURE SENSORS FOR LOCALIZED TEMPERATURE SENSING OF ACTIVE SEMICONDUCTOR AREAS IN INTEGRATED CIRCUITS (ICs)QUALCOMM INC·Filed 2019·Application pending·0 cites
- 1646US2021320059A1Hybrid back-end-of-line (beol) dielectric for high capacitance density metal-oxide-metal (mom) capacitorQUALCOMM INC·Filed 2020·Application pending·0 cites
- 1746US2021005604A1Nanosheet Transistor StackQUALCOMM INC·Filed 2020·Application pending·0 cites
- 1844US10636789B2Transistor with low resistivity carbon alloyQUALCOMM INC·Filed 2017·Granted Apr 28, 2020·0 cites·26 claims
- 1944US2021313326A1Transistors in a layered arrangementQUALCOMM INC·Filed 2020·Application pending·0 cites
- 2043US10714582B2Controlling dimensions of a negative capacitance layer of a gate stack of a field-effect transistor (FET) to increase power densityQUALCOMM INC·Filed 2018·Granted Jul 14, 2020·0 cites·15 claims
- 2143US2020126995A1Memory implemented using negative capacitance materialQUALCOMM INC·Filed 2018·Application pending·0 cites
- 2242US2014203404A1Spiral metal-on-metal (smom) capacitors, and related systems and methodsQUALCOMM INC·Filed 2013·Application pending·0 cites
- 2341US2013320494A1Metal finger capacitors with hybrid metal finger orientations in stack with unidirectional metal layersQUALCOMM INC·Filed 2012·Application pending·0 cites
- 2440US2014197519A1Mim capacitor and mim capacitor fabrication for semiconductor devicesQUALCOMM INC·Filed 2013·Application pending·0 cites
- 2539US10756085B2Integrated circuit with metal gate having dielectric portion over isolation areaQUALCOMM INC·Filed 2017·Granted Aug 25, 2020·0 cites·8 claims
- 2638US2019103320A1Middle-of-line shielded gate for integrated circuitsQUALCOMM INC·Filed 2017·Application pending·0 cites
- 2732US9865330B2Stable SRAM bitcell design utilizing independent gate FinFETJUNG SEONG-OOK·Filed 2010·Granted Jan 9, 2018·0 cites·32 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →