Inventor · disambiguated record
Hyoung-Soo Ko
Also filed as: KO HYOUNG-SOO
39 granted patents·5 pending applications·126 citations·filing 1998–2020
96Inventor score
Top patents by PatentIndex Score
44 records- 0188US7319224B2Semiconductor probe with resistive tip and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 15, 2008·14 cites·10 claims
- 0284US6188129B1Stacked semiconductor chip package having external terminal pads and stackable chips having a protection layerHYUNDAI ELECTRONICS IND·Filed 1998·Granted Feb 13, 2001·76 cites·16 claims
- 0382US8785982B2Pixel for depth sensor and image sensor including the pixelKIM WOO JOO·Filed 2012·Granted Jul 22, 2014·5 cites·20 claims
- 0478US7968253B2Nano imprint master and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 28, 2011·4 cites·18 claims
- 0574US7911928B2High density data storage device and data recording or reproduction method using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 22, 2011·2 cites·2 claims
- 0673US7808025B2Electric field read/write head, method of manufacturing the same, and information storage device comprising the electric field read/write headSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 5, 2010·2 cites·15 claims
- 0773US7419843B2Method of manufacturing semiconductor probe having resistive tipSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 2, 2008·4 cites·10 claims
- 0873US7411210B2Semiconductor probe with resistive tip having metal shield thereonSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 12, 2008·5 cites·17 claims
- 0969US9118856B2Sensor, data processing system, and operating methodKIM WON JOO·Filed 2012·Granted Aug 25, 2015·2 cites·17 claims
- 1069US7852738B2Method of improving sensitivity of electric field sensor, storage apparatus including electric field sensor, and method of reproducing information of the storage apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 14, 2010·1 cites·12 claims
- 1167US8523555B2Apparatus comprising substrate and conductive layerKIM HAE-SUNG·Filed 2012·Granted Sep 3, 2013·1 cites·20 claims
- 1267US7759954B2Semiconductor probe having resistive tip and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 20, 2010·2 cites·7 claims
- 1367US7759153B2Method of fabricating electric field sensor having electric field shieldSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 20, 2010·2 cites·9 claims
- 1466US7464584B2Semiconductor probe and method of writing and reading information using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 16, 2008·2 cites·4 claims
- 1563US8920153B2Apparatus comprising substrate and conductive layerSEAGATE TECHNOLOGY LLC·Filed 2013·Granted Dec 30, 2014·0 cites·25 claims
- 1662US7889628B2Ferroelectric recording medium and writing method for the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 15, 2011·0 cites·10 claims
- 1761US7659562B2Electric field read/write head and method of manufacturing same and data read/write deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 9, 2010·2 cites·37 claims
- 1860US8248906B2Ferroelectric hard disk systemHONG SEUNG-BUM·Filed 2007·Granted Aug 21, 2012·0 cites·3 claims
- 1958US7885169B2Electric field sensor having vertical structure, fabrication method thereof, and storage unit using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 8, 2011·0 cites·23 claims
- 2058US7885170B2Reading/writing head using electric field, data reading/writing apparatus including the same, and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 8, 2011·0 cites·18 claims
- 2157US8349527B2Conductive layer including implanted metal ionsSEAGATE TECHNOLOGY INT·Filed 2011·Granted Jan 8, 2013·0 cites·16 claims
- 2256US9029785B2Method of fabricating microlens, and depth sensor including microlensPARK DOO CHEOL·Filed 2012·Granted May 12, 2015·0 cites·12 claims
- 2356US7933190B2Electric field read/write device and method of driving the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 26, 2011·0 cites·7 claims
- 2456US7687838B2Resistive memory device having array of probes and method of manufacturing the resistive memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 30, 2010·1 cites·6 claims
- 2554US9103722B2Unit pixels, depth sensors and three-dimensional image sensors including the sameKO HYOUNG-SOO·Filed 2014·Granted Aug 11, 2015·0 cites·20 claims
- 2654US8107354B2Electric field read/write head, method of manufacturing the same, and information storage device comprising electric field read/write headKO HYOUNG-SOO·Filed 2008·Granted Jan 31, 2012·0 cites·19 claims
- 2753US2013148097A1Distance measuring sensorSHIN JAE-SUNG·Filed 2012·Application pending·0 cites
- 2852US8901498B2Unit pixels, depth sensors and three-dimensional image sensors including the sameKO HYOUNG-SOO·Filed 2012·Granted Dec 2, 2014·0 cites·20 claims
- 2952US7733761B2Ferroelectric recording medium comprising anisotropic conduction layer, recording apparatus comprising the same, and recording method of the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 8, 2010·0 cites·19 claims
- 3051US8432001B2Electric field information reading head, electric field information writing/reading head and fabrication methods thereof and information storage device using the sameJUNG JU-HWAN·Filed 2007·Granted Apr 30, 2013·0 cites·22 claims
- 3150US2012294137A1Ferroelectric read headHONG SEUNG-BUM·Filed 2012·Application pending·0 cites
- 3249US2009285082A1Electric field read/write head, method of manufacturing the electric field read/write head, and information storage device including the electric field read/write headSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 3348US7915109B2Semiconductor probe structure using impact-ionization metal oxide semiconductor device, information storing device therewith and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 29, 2011·0 cites·9 claims
- 3447US8064324B2Electric field effect read/write head, method of manufacturing the same, and electric field effect storage apparatus having the sameKO HYOUNG-SOO·Filed 2008·Granted Nov 22, 2011·0 cites·13 claims
- 3546US7528371B2Semiconductor probe having resistive tip with low aspect ratio and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 5, 2009·0 cites·18 claims
- 3645US7605014B2Method of fabricating resistive probe having self-aligned metal shieldSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 20, 2009·0 cites·10 claims
- 3744US7820311B2Ferroelectric recording medium and writing method for the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 26, 2010·1 cites·6 claims
- 3844US7700393B2Method of manufacturing enhancement type semiconductor probe and information storage device having the semiconductor probe using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Apr 20, 2010·0 cites·10 claims
- 3942US2012268566A1Three-dimensional color image sensors having spaced-apart multi-pixel color regions thereinKIM WON-JOO·Filed 2012·Application pending·0 cites
- 4041US11010532B2Simulation method and systemSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 18, 2021·0 cites·19 claims
- 4141US8304808B2Electric field read/write headJUNG JU-HWAN·Filed 2008·Granted Nov 6, 2012·0 cites·20 claims
- 4241US7994499B2Semiconductor probe having wedge shape resistive tip and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 9, 2011·0 cites·4 claims
- 4340US7529119B2Magnetic logic device and methods of manufacturing and operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 5, 2009·0 cites·26 claims
- 4435US2007211542A1Multi-probe for writing and reading data and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →