Inventor · disambiguated record
Jens Heinrich
Also filed as: HEINRICH JENS · HEINRICH JENS-DIETMER
44 granted patents·6 pending applications·174 citations·filing 1996–2022
97Inventor score
Top patents by PatentIndex Score
50 records- 0194US9275815B2Relay having two switches that can be actuated in opposite directionsPHOENIX CONTACT GMBH & CO·Filed 2013·Granted Mar 1, 2016·37 cites·15 claims
- 0286US8367504B2Method for forming semiconductor fuses in a semiconductor device comprising metal gatesGLOBALFOUNDRIES INC·Filed 2010·Granted Feb 5, 2013·6 cites·12 claims
- 0386US8182709B2CMP system and method using individually controlled temperature zonesHEINRICH JENS·Filed 2008·Granted May 22, 2012·11 cites·18 claims
- 0483US8138038B2Superior fill conditions in a replacement gate approach by performing a polishing process based on a sacrificial fill materialHEINRICH JENS·Filed 2010·Granted Mar 20, 2012·8 cites·22 claims
- 0582US8951907B2Semiconductor devices having through-contacts and related fabrication methodsRICHTER RALF·Filed 2010·Granted Feb 10, 2015·7 cites·18 claims
- 0682US8183139B2Reduced defectivity in contacts of a semiconductor device comprising replacement gate electrode structures by using an intermediate cap layerMARXSEN GERD·Filed 2010·Granted May 22, 2012·8 cites·20 claims
- 0781US7985668B1Method for forming a metal silicide having a lower potential for containing material defectsGLOBALFOUNDRIES INC·Filed 2010·Granted Jul 26, 2011·6 cites·18 claims
- 0878US8716079B2Superior fill conditions in a replacement gate approach by corner rounding based on a sacrificial fill materialHEINRICH JENS·Filed 2010·Granted May 6, 2014·6 cites·11 claims
- 0976US8216928B1Methods for fabricating semiconductor devices having local contactsRICHTER RALF·Filed 2011·Granted Jul 10, 2012·4 cites·20 claims
- 1075US8786088B2Semiconductor device including ultra low-K (ULK) metallization stacks with reduced chip-package interactionHUISINGA TORSTEN·Filed 2010·Granted Jul 22, 2014·4 cites·12 claims
- 1169US8877597B2Embedding metal silicide contact regions reliably into highly doped drain and source regions by a stop implantationHEINRICH JENS·Filed 2011·Granted Nov 4, 2014·2 cites·17 claims
- 1266US8497554B2Semiconductor device comprising metal gate structures formed by a replacement gate approach and efuses including a silicideWEI ANDY·Filed 2010·Granted Jul 30, 2013·2 cites·20 claims
- 1366US8492269B2Hybrid contact structure with low aspect ratio contacts in a semiconductor deviceHEINRICH JENS·Filed 2011·Granted Jul 23, 2013·2 cites·15 claims
- 1466US8383510B2Semiconductor device comprising metallization layers of reduced interlayer capacitance by reducing the amount of etch stop materialsGLOBALFOUNDRIES INC·Filed 2011·Granted Feb 26, 2013·2 cites·17 claims
- 1566US7951677B2Corner rounding in a replacement gate approach based on a sacrificial fill material applied prior to work function metal depositionGLOBALFOUNDRIES INC·Filed 2010·Granted May 31, 2011·2 cites·20 claims
- 1663US8338306B2Forming semiconductor resistors in a semiconductor device comprising metal gates by increasing etch resistivity of the resistorsHEINRICH JENS·Filed 2010·Granted Dec 25, 2012·2 cites·16 claims
- 1762US6081176AElectromagnetic relaySIEMENS ELECTROMECH COMPONENTS·Filed 1999·Granted Jun 27, 2000·18 cites·10 claims
- 1860US8536052B2Semiconductor device comprising contact elements with silicided sidewall regionsHEINRICH JENS·Filed 2011·Granted Sep 17, 2013·1 cites·15 claims
- 1959US11177063B2Method for magnetising at least two magnets having different magnetic coercivityPHOENIX CONTACT GMBH & CO·Filed 2018·Granted Nov 16, 2021·0 cites·11 claims
- 2059US8749330B2Electric contact element and method for producing an electric contact elementHEINRICH JENS·Filed 2011·Granted Jun 10, 2014·1 cites·19 claims
- 2159US5734308AElectromagnetic monostable small relaySIEMENS AG·Filed 1996·Granted Mar 31, 1998·16 cites·12 claims
- 2258US8436425B2SOI semiconductor device comprising substrate diodes having a topography tolerant contact structureHEINRICH JENS·Filed 2010·Granted May 7, 2013·1 cites·20 claims
- 2355US12200872B2Control device for a motor vehicleVITESCO TECHNOLOGIES GERMANY GMBH·Filed 2022·Granted Jan 14, 2025·0 cites·10 claims
- 2453US9153684B2Semiconductor fuses in a semiconductor device comprising metal gatesHEINRICH JENS·Filed 2013·Granted Oct 6, 2015·0 cites·15 claims
- 2550US9368304B2Polarized electromagnetic relay and method for production thereofPHOENIX CONTACT GMBH & CO·Filed 2013·Granted Jun 14, 2016·0 cites·12 claims
- 2649US12058809B2Control unit for a motor vehicle and method for producing and measuring the tightness of a control unitVITESCO TECHNOLOGIES GERMANY GMBH·Filed 2022·Granted Aug 6, 2024·0 cites·10 claims
- 2749US2014264877A1Metallization systems of semiconductor devices comprising a copper/silicon compound as a barrier materialGLOBALFOUNDRIES INC·Filed 2014·Application pending·0 cites
- 2847US10324431B2Method for monitoring an electromechanical component of an automation systemPHOENIX CONTACT GMBH CO KG·Filed 2017·Granted Jun 18, 2019·0 cites·18 claims
- 2947US6002312AElectromagnetic relaySIEMENS AG·Filed 1997·Granted Dec 14, 1999·10 cites·11 claims
- 3045US8344151B2Process for the preparation of 4-aminobut-2-enolides starting from 4-alkoxyfuran-2(5H)-one or 4-arylalkoxyfuran-2(5H)-oneBAYER CROPSCIENCE AG·Filed 2010·Granted Jan 1, 2013·0 cites·12 claims
- 3144US6140895AElectromagnetic relaySIEMENS AG·Filed 1998·Granted Oct 31, 2000·9 cites·8 claims
- 3242US8941182B2Buried sublevel metallizations for improved transistor densityFROHBERG KAI·Filed 2011·Granted Jan 27, 2015·0 cites·17 claims
- 3342US8833855B2Vehicle seat having a movable backrest partDILSEN MICHAEL·Filed 2011·Granted Sep 16, 2014·2 cites·10 claims
- 3442US8778795B2Metallization systems of semiconductor devices comprising a copper/silicon compound as a barrier materialPFUETZNER RONNY·Filed 2011·Granted Jul 15, 2014·0 cites·18 claims
- 3541US7905764B2Polishing head using zone controlGLOBOLFOUNDRIES INC·Filed 2008·Granted Mar 15, 2011·0 cites·37 claims
- 3641US6118359APolarized electromagnetic relaySIEMENS ELECTROMECH COMPONENTS·Filed 1999·Granted Sep 12, 2000·7 cites·17 claims
- 3741US2008242195A1Cmp system having an eddy current sensor of reduced heightHEINRICH JENS·Filed 2007·Application pending·0 cites
- 3841US2008242196A1Method and system for controlling chemical mechanical polishing by taking zone specific substrate data into accountMARXSEN GERD·Filed 2007·Application pending·0 cites
- 3940US8922023B2Semiconductor device comprising metallization layers of reduced interlayer capacitance by reducing the amount of etch stop materialsHEINRICH JENS·Filed 2013·Granted Dec 30, 2014·0 cites·15 claims
- 4040US8673770B2Methods of forming conductive structures in dielectric layers on an integrated circuit deviceHUISINGA TORSTEN·Filed 2011·Granted Mar 18, 2014·0 cites·22 claims
- 4140US8673696B2SOI semiconductor device comprising a substrate diode with reduced metal silicide leakageBAARS PETER·Filed 2012·Granted Mar 18, 2014·0 cites·17 claims
- 4239US8048726B2SOI semiconductor device with reduced topography above a substrate window areaGLOBALFOUNDRIES INC·Filed 2010·Granted Nov 1, 2011·0 cites·21 claims
- 4338US9034744B2Replacement gate approach for high-k metal gate stacks by avoiding a polishing process for exposing the placeholder materialRICHTER RALF·Filed 2010·Granted May 19, 2015·0 cites·21 claims
- 4438US8658509B2Semiconductor resistors formed at a lower height level in a semiconductor device comprising metal gatesRICHTER RALF·Filed 2010·Granted Feb 25, 2014·0 cites·17 claims
- 4538US8329526B2Cap removal in a high-k metal gate electrode structure by using a sacrificial fill materialHEINRICH JENS·Filed 2010·Granted Dec 11, 2012·0 cites·17 claims
- 4638US2010112816A1Method of reducing non-uniformities during chemical mechanical polishing of microstructure devices by using cmp pads in a glazed modeMARXSEN GERD·Filed 2009·Application pending·0 cites
- 4737US2012153405A1Semiconductor Device Comprising a Contact Structure with Reduced Parasitic CapacitanceHEINRICH JENS·Filed 2011·Application pending·0 cites
- 4835US2012115326A1Method of Forming Metal Silicide RegionsFROHBERG KAI·Filed 2010·Application pending·0 cites
- 4932US8685807B2Method of forming metal gates and metal contacts in a common fill processPFUETZNER RONNY·Filed 2011·Granted Apr 1, 2014·0 cites·17 claims
- 5026US8772154B2Integrated circuits including barrier polish stop layers and methods for the manufacture thereofPFÜTZNER EGON RONNY·Filed 2011·Granted Jul 8, 2014·0 cites·15 claims
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