Inventor · disambiguated record
Munehisa Yanagisawa
Also filed as: YANAGISAWA MUNEHISA
14 granted patents·1 pending application·36 citations·filing 1992–2019
89Inventor score
Top patents by PatentIndex Score
15 records- 0145US5636023AApparatus for measuring surface shapeSHINETSU HANDOTAI KK·Filed 1995·Granted Jun 3, 1997·12 cites·4 claims
- 0244US2020365767A1Light-emitting diode structure and method for forming the sameSHIN ETSU OPTO ELECTRONIC CO LTD·Filed 2019·Application pending·0 cites
- 0334US5985023AMethod for growth of a nitrogen-doped gallium phosphide epitaxial layerSHINETSU HANDOTAI KK·Filed 1996·Granted Nov 16, 1999·4 cites·3 claims
- 0434US5759267ALiquid phase epitaxialSHINETSU HANDOTAI KK·Filed 1996·Granted Jun 2, 1998·2 cites·20 claims
- 0534US5603761ALiquid phase epitaxial growth method for carrying out the sameSHINETSU HANDOTAI KK·Filed 1995·Granted Feb 18, 1997·2 cites·8 claims
- 0633US5571321AMethod for producing a gallium phosphide epitaxial waferSHINETSU HANDOTAI KK·Filed 1994·Granted Nov 5, 1996·5 cites·1 claims
- 0732US5349208AGaP light emitting element substrate with oxygen doped bufferSHINETSU HANDOTAI KK·Filed 1993·Granted Sep 20, 1994·5 cites·1 claims
- 0830US5731209AMethod for the determination of nitrogen concentration in compound semiconductorSHINETSU HANDOTAI KK·Filed 1996·Granted Mar 24, 1998·1 cites·6 claims
- 0929US5514881AGap light emitting device having a low carbon content in the substrateSHINETSU HANDOTAI KK·Filed 1995·Granted May 7, 1996·1 cites·4 claims
- 1028US5851850AMethod for fabricating a gap type semiconductor substrate of red light emitting devicesSHINETSU HANDOTAI KK·Filed 1995·Granted Dec 22, 1998·0 cites·5 claims
- 1128US5234534ALiquid-phase growth process of compound semiconductorSHINETSU HANDOTAI KK·Filed 1992·Granted Aug 10, 1993·0 cites·4 claims
- 1227US5407858AMethod of making gap red light emitting element substrate by LPESHINETSU HANDOTAI KK·Filed 1994·Granted Apr 18, 1995·2 cites·7 claims
- 1326US5300792AGap red light emitting diodeSHINETSU HANDOTAI KK·Filed 1992·Granted Apr 5, 1994·1 cites·4 claims
- 1425US5643827AGaP light emitting substrate and a method of manufacturing itSHINETSU HANDOTAI KK·Filed 1994·Granted Jul 1, 1997·0 cites·2 claims
- 1518US5500390AMethod for control of Si concentration in gallium phosphide single crystal layer by liquid phase epitaxial growth techniqueSHIN ETSU HANDATOI CO LTD·Filed 1995·Granted Mar 19, 1996·1 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →