Inventor · disambiguated record
Ryotaro Yagi
Also filed as: YAGI RYOTARO
11 granted patents·1 pending application·20 citations·filing 2007–2016
85Inventor score
Top patents by PatentIndex Score
12 records- 0177US7646101B2Semiconductor device and manufacturing method thereofROHM CO LTD·Filed 2007·Granted Jan 12, 2010·6 cites·3 claims
- 0276US8237221B2Semiconductor device and method of manufacturing semiconductor deviceYAGI RYOTARO·Filed 2011·Granted Aug 7, 2012·5 cites·3 claims
- 0372US8022497B2Semiconductor device comprising insulating filmSANYO ELECTRIC CO·Filed 2007·Granted Sep 20, 2011·4 cites·14 claims
- 0468US8022472B2Semiconductor device and method of manufacturing semiconductor deviceROHM CO LTD·Filed 2008·Granted Sep 20, 2011·3 cites·7 claims
- 0558US8384208B2Semiconductor device and method of fabricating the sameSANYO ELECTRIC CO·Filed 2007·Granted Feb 26, 2013·2 cites·6 claims
- 0657US8304908B2Semiconductor device having a multilevel interconnect structure and method for fabricating the sameKOIKE JUNICHI·Filed 2009·Granted Nov 6, 2012·0 cites·8 claims
- 0754US8709939B2Semiconductor device having a multilevel interconnect structure and method for fabricating the sameSEMICONDUCTOR TECH ACAD RES CT·Filed 2012·Granted Apr 29, 2014·0 cites·11 claims
- 0850US9281391B2Semiconductor device and method of manufacturing semiconductor deviceROHM CO LTD·Filed 2014·Granted Mar 8, 2016·0 cites·12 claims
- 0949US10115792B2Semiconductor device and method of manufacturing semiconductor deviceROHM CO LTD·Filed 2016·Granted Oct 30, 2018·0 cites·13 claims
- 1049US7781863B2Semiconductor device and method of manufacturing the sameROHM CO LTD·Filed 2008·Granted Aug 24, 2010·0 cites·7 claims
- 1146US8044491B2Semiconductor device and method of manufacturing the sameROHM CO LTD·Filed 2010·Granted Oct 25, 2011·0 cites·9 claims
- 1243US2007269977A1Method of forming a multilayer wiring by the use of copper damascene techniqueNEC CORP·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →