Inventor · disambiguated record
Jean-Charles Barbe
Also filed as: BARBE JEAN-CHARLES
21 granted patents·102 citations·filing 2000–2016
92Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE15BOROWIK LUKASZ2BARBE JEAN-CHARLES1DE CRECY FRANCOIS1DORNEL ERWAN1
Top patents by PatentIndex Score
21 records- 0192US8697548B2Method for making semi-conductor nanocrystals oriented along a predefined directionBOROWIK LUKASZ·Filed 2012·Granted Apr 15, 2014·32 cites·5 claims
- 0292US8647957B2Method for making semi-conductor nanocrystalsBOROWIK LUKASZ·Filed 2012·Granted Feb 11, 2014·33 cites·11 claims
- 0387US7675217B2Mechanical oscillator formed by a network of basic oscillatorsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2007·Granted Mar 9, 2010·19 cites·27 claims
- 0468US8363330B2Membrane, especially for an optical device having a deformable membraneCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2009·Granted Jan 29, 2013·3 cites·35 claims
- 0568US7713850B2Method for forming a structure provided with at least one zone of one or several semiconductor nanocrystals localised with precisionCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2005·Granted May 11, 2010·4 cites·18 claims
- 0666US8236698B2Method for forming non-aligned microcavities of different depthsBARBE JEAN-CHARLES·Filed 2007·Granted Aug 7, 2012·4 cites·8 claims
- 0762US8583403B2Method of measuring an anisotropic surface diffusion tensor or surface energy anisotropiesDE CRECY FRANCOIS·Filed 2009·Granted Nov 12, 2013·1 cites·22 claims
- 0860US8853023B2Method for stressing a thin pattern and transistor fabrication method incorporating said methodCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Oct 7, 2014·1 cites·13 claims
- 0957US8343780B2Method of stressing a thin patternCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2005·Granted Jan 1, 2013·1 cites·35 claims
- 1057US7625811B2Method for producing distinct first and second active semi-conducting zones and use thereof for fabricating C-MOS structuresCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2006·Granted Dec 1, 2009·1 cites·14 claims
- 1147US7985632B2Method for forming microwires and/or nanowiresCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2007·Granted Jul 26, 2011·3 cites·9 claims
- 1247US7579226B2Thin layer element and associated fabrication processCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2005·Granted Aug 25, 2009·0 cites·20 claims
- 1343US8252636B2Method of manufacturing nanowires parallel to the supporting substrateDORNEL ERWAN·Filed 2008·Granted Aug 28, 2012·0 cites·9 claims
- 1443US7473588B2Method for insulating patterns formed in a thin film of oxidizable semi-conducting materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2005·Granted Jan 6, 2009·0 cites·17 claims
- 1539US7635615B2Manufacturing processing for an isolated transistor with strained channelCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2006·Granted Dec 22, 2009·0 cites·29 claims
- 1638US10109484B2Method for producing nanocrystals with controlled dimensions and densityCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Oct 23, 2018·0 cites·8 claims
- 1737US9853130B2Method of modifying the strain state of a semiconducting structure with stacked transistor channelsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Dec 26, 2017·0 cites·10 claims
- 1837US8530292B2Method for manufacturing a strained channel MOS transistorMORAND YVES·Filed 2011·Granted Sep 10, 2013·0 cites·17 claims
- 1937US7951659B2Method for simultaneously tensile and compressive straining the channels of NMOS and PMOS transistors respectivelyCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2009·Granted May 31, 2011·0 cites·25 claims
- 2037US7510919B2Anchoring, by lateral oxidizing, of patterns of a thin film to prevent the dewetting phenomenonCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2005·Granted Mar 31, 2009·0 cites·14 claims
- 2136US6988392B2Relaxation-type viscosimeter having a magnetic field generator and method thereforCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2000·Granted Jan 24, 2006·0 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →