Inventor · disambiguated record
Francois M. D'Heurle
Also filed as: D HEURLE FRANCOIS M · D HEURLE FRANCOIS MAX · D HEURLE FRANÇOIS MAX
9 granted patents·332 citations·filing 1975–1997
91Inventor score
Files withIBM9
Top patents by PatentIndex Score
9 records- 0190US5624869AMethod of forming a film for a multilayer Semiconductor device for improving thermal stability of cobalt silicide using platinum or nitrogenIBM·Filed 1994·Granted Apr 29, 1997·70 cites·40 claims
- 0287US5828131ALow temperature formation of low resistivity titanium silicideIBM·Filed 1996·Granted Oct 27, 1998·60 cites·6 claims
- 0385US5608266AThin film for a multilayer semiconductor device for improving thermal stability and a method thereofIBM·Filed 1995·Granted Mar 4, 1997·58 cites·13 claims
- 0481US5510295AMethod for lowering the phase transformation temperature of a metal silicideIBM·Filed 1993·Granted Apr 23, 1996·47 cites·31 claims
- 0572US5834374AMethod for controlling tensile and compressive stresses and mechanical problems in thin films on substratesIBM·Filed 1995·Granted Nov 10, 1998·30 cites·7 claims
- 0665US4012756AMethod of inhibiting hillock formation in films and film thereby and multilayer structure therewithIBM·Filed 1975·Granted Mar 15, 1977·22 cites·7 claims
- 0760US5143867AMethod for depositing interconnection metallurgy using low temperature alloy processesIBM·Filed 1991·Granted Sep 1, 1992·31 cites·34 claims
- 0849US6187679B1Low temperature formation of low resistivity titanium silicideIBM·Filed 1997·Granted Feb 13, 2001·9 cites·14 claims
- 0939US5945737AThin film or solder ball including a metal and an oxide, nitride, or carbide precipitate of an expandable or contractible elementIBM·Filed 1997·Granted Aug 31, 1999·5 cites·33 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →