Inventor · disambiguated record
Wen-Yueh Jang
Also filed as: JANG WEN-YUEH
39 granted patents·3 pending applications·817 citations·filing 1991–2020
98Inventor score
Files withWINBOND ELECTRONICS CORP32POWERCHIP SEMICONDUCTOR MFG CORP3JANG WEN-YUEH2WINDBOND ELECTRONICS CORP2WINBOND ELECTRONIC CORP1
Top patents by PatentIndex Score
42 records- 0195US5439839ASelf-aligned source/drain MOS processWINBOND ELECTRONICS CORP·Filed 1994·Granted Aug 8, 1995·198 cites·3 claims
- 0294US6946702B2Resistance random access memoryWINBOND ELECTRONICS CORP·Filed 2003·Granted Sep 20, 2005·85 cites·15 claims
- 0392US6720611B2Fabrication method for flash memoryWINBOND ELECTRONICS CORP·Filed 2002·Granted Apr 13, 2004·47 cites·12 claims
- 0491US9012880B2Resistance memory deviceWINBOND ELECTRONICS CORP·Filed 2013·Granted Apr 21, 2015·8 cites·8 claims
- 0584US5438005ADeep collection guard ringWINBOND ELECTRONICS CORP·Filed 1994·Granted Aug 1, 1995·55 cites·7 claims
- 0681US5910018ATrench edge rounding method and structure for trench isolationWINBOND ELECTRONICS CORP·Filed 1997·Granted Jun 8, 1999·66 cites·6 claims
- 0778US5267194AElectrically erasable programmable read-only-memory cell with side-wall floating gateWINBOND ELECTRONICS CORP·Filed 1991·Granted Nov 30, 1993·43 cites·10 claims
- 0877US6686243B2Fabrication method for flash memoryWINBOND ELECTRONICS CORP·Filed 2003·Granted Feb 3, 2004·15 cites·16 claims
- 0976US6489646B1DRAM cells with buried trench capacitorsWINBOND ELECTRONICS CORP·Filed 2002·Granted Dec 3, 2002·22 cites·6 claims
- 1076US5508224AMethod of making ESD protection deviceWINBOND ELECTRONICS CORP·Filed 1995·Granted Apr 16, 1996·34 cites·3 claims
- 1175US9203020B2Resistance memory deviceWINBOND ELECTRONICS CORP·Filed 2015·Granted Dec 1, 2015·2 cites·10 claims
- 1275US8835990B23D memory arrayJANG WEN-YUEH·Filed 2011·Granted Sep 16, 2014·4 cites·9 claims
- 1375US6649979B2Method of manufacturing MOSFET and structure thereofWINBOND ELECTRONICS CORP·Filed 2001·Granted Nov 18, 2003·21 cites·15 claims
- 1472US6730957B1Non-volatile memory compatible with logic devices and fabrication method thereofWINBOND ELECTRONICS CORP·Filed 2002·Granted May 4, 2004·17 cites·14 claims
- 1572US6587396B1Structure of horizontal surrounding gate flash memory cellWINBOND ELECTRONICS CORP·Filed 2001·Granted Jul 1, 2003·15 cites·14 claims
- 1672US6531733B1Structure of flash memory cell and method for manufacturing the sameWINDBOND ELECTRONICS CORP·Filed 2001·Granted Mar 11, 2003·15 cites·12 claims
- 1771US9966530B2Resistive random access memory device and method for fabricating the sameWINBOND ELECTRONICS CORP·Filed 2017·Granted May 8, 2018·1 cites·9 claims
- 1871US9076797B23D memory arrayWINBOND ELECTRONICS CORP·Filed 2014·Granted Jul 7, 2015·2 cites·10 claims
- 1968US6667201B2Method for manufacturing flash memory cellWINDBOND ELECTRONICS CORP·Filed 2002·Granted Dec 23, 2003·12 cites·10 claims
- 2068US5654212AMethod for making a variable length LDD spacer structureWINBOND ELECTRONICS CORP·Filed 1995·Granted Aug 5, 1997·29 cites·11 claims
- 2166US7332390B2Semiconductor memory device and fabrication thereofWINBOND ELECTRONICS CORP·Filed 2005·Granted Feb 19, 2008·3 cites·9 claims
- 2263US6720218B2Method for manufacturing horizontal surrounding gate flash memory cellWINBOND ELECTRONICS CORP·Filed 2003·Granted Apr 13, 2004·9 cites·10 claims
- 2362US11257830B2Memory structurePOWERCHIP SEMICONDUCTOR MFG CORP·Filed 2020·Granted Feb 22, 2022·0 cites·5 claims
- 2462US6784477B2Structure of a deep trench-type DRAMWINBOND ELECTRONICS CORP·Filed 2002·Granted Aug 31, 2004·10 cites·31 claims
- 2562US6661044B2Method of manufacturing MOSEFT and structure thereofWINBOND ELECTRONICS CORP·Filed 2001·Granted Dec 9, 2003·10 cites·14 claims
- 2661US7060572B2MOSFET with short channel structure and formation method thereofWINBOND ELECTRONICS CORP·Filed 2004·Granted Jun 13, 2006·6 cites·16 claims
- 2761US6933187B2Method for forming narrow trench structuresWINBOND ELECTRONICS CORP·Filed 2004·Granted Aug 23, 2005·7 cites·13 claims
- 2861US6177325B1Self-aligned emitter and base BJT process and structureWINBOND ELECTRONICS CORP·Filed 1998·Granted Jan 23, 2001·20 cites·4 claims
- 2960US5545910AESD proctection deviceWINBOND ELECTRONICS CORP·Filed 1994·Granted Aug 13, 1996·17 cites·8 claims
- 3058US10896910B2Memory structure and manufacturing method thereofPOWERCHIP SEMICONDUCTOR MFG CORP·Filed 2019·Granted Jan 19, 2021·0 cites·10 claims
- 3153US5444004ACMOS process compatible self-alignment lateral bipolar junction transistorWINBOND ELECTRONICS CORP·Filed 1994·Granted Aug 22, 1995·13 cites·5 claims
- 3252US9728720B2Resistive random access memory device and method for fabricating the sameWINBOND ELECTRONICS CORP·Filed 2015·Granted Aug 8, 2017·0 cites·14 claims
- 3352US5348896AMethod for fabricating a BiCMOS deviceWINBOND ELECTRONIC CORP·Filed 1993·Granted Sep 20, 1994·17 cites·4 claims
- 3451US8999781B2Method for fabricating semiconductor deviceWINBOND ELECTRONICS CORP·Filed 2013·Granted Apr 7, 2015·0 cites·10 claims
- 3545US10868196B2Memory device and manufacturing method thereofPOWERCHIP SEMICONDUCTOR MFG CORP·Filed 2019·Granted Dec 15, 2020·0 cites·11 claims
- 3645US5501991AProcess for making a bipolar junction transistor with a self-aligned base contactWINBOND ELECTRONICS CORP·Filed 1994·Granted Mar 26, 1996·8 cites·1 claims
- 3744US8421127B2Semiconductor device and method for fabricating the sameJANG WEN-YUEH·Filed 2011·Granted Apr 16, 2013·0 cites·9 claims
- 3843US2009057740A1Memory with surface strapWINBOND ELECTRONICS CORP·Filed 2007·Application pending·0 cites
- 3941US2004053456A1Mosfet with short channel structure and formation method thereofFiled 2002·Application pending·0 cites
- 4039US5670822ACMOS process compatible self-alignment lateral bipolar junction transistorWINBOND ELECTRONICS CORP·Filed 1995·Granted Sep 23, 1997·6 cites·7 claims
- 4138US2004051138A1MOSFET with low leakage current and fabrication method thereofFiled 2002·Application pending·0 cites
- 4237US7463524B2Reading and writing method for non-volatile memory with multiple data statesWINBOND ELECTRONICS CORP·Filed 2006·Granted Dec 9, 2008·0 cites·14 claims
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