Inventor · disambiguated record
Yoshinori Okumura
Also filed as: OKUMURA YOSHINORI
52 granted patents·3 pending applications·1,410 citations·filing 1987–2009
99Inventor score
Top patents by PatentIndex Score
55 records- 0197US6461920B1Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Oct 8, 2002·124 cites·6 claims
- 0294US5763921ASemiconductor device including retrograde well structure with suppressed substrate bias effectsMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jun 9, 1998·136 cites·2 claims
- 0390US5101250AElectrically programmable non-volatile memory device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Mar 31, 1992·99 cites·13 claims
- 0487US6492690B2Semiconductor device having control electrodes with different impurity concentrationsMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Dec 10, 2002·61 cites·10 claims
- 0584US6144079ASemiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Nov 7, 2000·62 cites·8 claims
- 0682US4912535ATrench type semiconductor memory device having side wall contactMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Mar 27, 1990·41 cites·33 claims
- 0780US6777758B2Semiconductor deviceRENESAS TECH CORP·Filed 2001·Granted Aug 17, 2004·31 cites·14 claims
- 0878US5164806AElement isolating structure of semiconductor device suitable for high density integrationMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Nov 17, 1992·68 cites·11 claims
- 0977US5998828ASemiconductor device having nitrogen introduced in its polysilicon gateMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Dec 7, 1999·51 cites·15 claims
- 1076US5032882ASemiconductor device having trench type structureMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Jul 16, 1991·40 cites·18 claims
- 1175US6399985B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jun 4, 2002·17 cites·8 claims
- 1274US5218221ASemiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jun 8, 1993·56 cites·13 claims
- 1374US4894695ASemiconductor device with no stress generated at the trench corner portion and the method for making the sameMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Jan 16, 1990·27 cites·14 claims
- 1473US6388295B1Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2000·Granted May 14, 2002·21 cites·20 claims
- 1573US5428239ASemiconductor device having retrograde well and diffusion-type wellMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Jun 27, 1995·48 cites·8 claims
- 1672US4985368AMethod for making semiconductor device with no stress generated at the trench corner portionMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Jan 15, 1991·24 cites·22 claims
- 1771US5594264ALDD semiconductor device with peak impurity concentrationsMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jan 14, 1997·32 cites·5 claims
- 1870US7180773B2Magnetic memory deviceRENESAS TECH CORP·Filed 2005·Granted Feb 20, 2007·3 cites·3 claims
- 1970US4877750AMethod of fabricating a trench capacitor cell for a semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Oct 31, 1989·25 cites·7 claims
- 2069US6770522B2Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2003·Granted Aug 3, 2004·10 cites·1 claims
- 2169US4935380AMethod for manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Jun 19, 1990·34 cites·25 claims
- 2267US4984055ASemiconductor device having a plurality of conductive layers and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Jan 8, 1991·33 cites·12 claims
- 2366US5404042ASemiconductor memory device having a plurality of well regions of different conductivitiesMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Apr 4, 1995·26 cites·4 claims
- 2464US7403415B2Magnetic memory deviceRENEASA TECHNOLOGY CORP·Filed 2007·Granted Jul 22, 2008·3 cites·4 claims
- 2562US7554837B2Magnetic memory deviceRENESAS TECH CORP·Filed 2008·Granted Jun 30, 2009·1 cites·6 claims
- 2661US5231041AManufacturing method of an electrically programmable non-volatile memory device having the floating gate extending over the control gateMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jul 27, 1993·22 cites·4 claims
- 2761US4953125ASemiconductor memory device having improved connecting structure of bit line and memory cellMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Aug 28, 1990·18 cites·9 claims
- 2860US6300656B1Nonvolatile semiconductor memory device having a drain region of different impurity density and conductivity typesMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Oct 9, 2001·22 cites·20 claims
- 2960US5240872AMethod of manufacturing semiconductor device having interconnection layer contacting source/drain regionsMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Aug 31, 1993·29 cites·4 claims
- 3060US5212542ASemiconductor device having at least two field effect transistors and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1991·Granted May 18, 1993·20 cites·9 claims
- 3159US6577021B2Static-type semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Jun 10, 2003·14 cites·12 claims
- 3259US5393688AMethod of manufacturing a stacked capacitor DRAMMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Feb 28, 1995·16 cites·6 claims
- 3358US6020610ASemiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Feb 1, 2000·15 cites·7 claims
- 3457US2009237989A1Magnetic memory deviceRENESAS TECH CORP·Filed 2009·Application pending·0 cites
- 3554US5173752ASemiconductor device having interconnection layer contacting source/drain regionsMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Dec 22, 1992·22 cites·8 claims
- 3652US6670277B2Method of manufacturing semiconductor deviceRENESAS TECH CORP·Filed 2001·Granted Dec 30, 2003·3 cites·17 claims
- 3750US4891327AMethod for manufacturing field effect transistorMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Jan 2, 1990·11 cites·12 claims
- 3848US5536957AMOS field effect transistor having source/drain regions surrounded by impurity wellsMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Jul 16, 1996·17 cites·1 claims
- 3946US6734486B2Recessed plug semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 1998·Granted May 11, 2004·8 cites·8 claims
- 4046US5627093AMethod of manufacturing a wiring layer for use in a semiconductor device having a plurality of conductive layersMITSUBISHI ELECTRIC CORP·Filed 1995·Granted May 6, 1997·11 cites·9 claims
- 4146US5153689ASemiconductor memory device having bit lines formed of an interconnecting layer of lower reflectance material than the material of the word linesMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Oct 6, 1992·14 cites·7 claims
- 4246US4906591AMethod of manufacturing a semiconductor device having an electric contact portionMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Mar 6, 1990·14 cites·11 claims
- 4345US6163046ASemiconductor device and method of fabricating semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Dec 19, 2000·8 cites·9 claims
- 4443US4956692ASemiconductor device having an isolation oxide filmMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Sep 11, 1990·11 cites·4 claims
- 4543US4741802AMethod for manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1987·Granted May 3, 1988·11 cites·6 claims
- 4643US2004185609A1Semiconductor manufacturing method including forming additional active layerRENESAS TECH CORP·Filed 2004·Application pending·0 cites
- 4742US6333535B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Dec 25, 2001·10 cites·4 claims
- 4841US2002020870A1Nonvolatile semiconductor memory device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2001·Application pending·0 cites
- 4940US6162669AMethod of manufacturing a semiconductor device having an LDD structure with a recess in the source/drain region formed during removal of a damaged layerMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Dec 19, 2000·5 cites·6 claims
- 5040US5932912ASemiconductor device having LDD structure with a recess in the source/drain region which is formed during the removal of a damaged layerMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Aug 3, 1999·5 cites·20 claims
Showing the top 50 of 55 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →