Inventor · disambiguated record
Jein-Chen Young
Also filed as: YOUNG JEIN-CHEN
14 granted patents·416 citations·filing 1991–2004
94Inventor score
Files withHYUNDAI ELECTRONICS AMERICA6ADVANCED MICRO DEVICES INC3LATTICE SEMICONDUCTOR CORP2WINBOND ELECTRONICS CORP2PHILIPS CORP1
Top patents by PatentIndex Score
14 records- 0195US7408212B1Stackable resistive cross-point memory with schottky diode isolationWINBOND ELECTRONICS CORP·Filed 2004·Granted Aug 5, 2008·103 cites·14 claims
- 0294US5278438AElectrically erasable and programmable read-only memory with source and drain regions along sidewalls of a trench structurePHILIPS CORP·Filed 1991·Granted Jan 11, 1994·112 cites·12 claims
- 0388US6366499B1Method of operating flash memoryHYUNDAI ELECTRONICS AMERICA·Filed 2000·Granted Apr 2, 2002·28 cites·20 claims
- 0485US6525970B2Erase method for flash memoryHYUNDAI ELECTRONICS AMERICA·Filed 2001·Granted Feb 25, 2003·21 cites·26 claims
- 0582US6347054B1Method of operating flash memoryHYUNDAI ELECTRONICS AMERICA·Filed 2000·Granted Feb 12, 2002·17 cites·21 claims
- 0681US6330190B1Semiconductor structure for flash memory enabling low operating potentialsHYUNDAI ELECTRONICS AMERICA·Filed 1997·Granted Dec 11, 2001·32 cites·20 claims
- 0778US6043123ATriple well flash memory fabrication processHYUNDAI ELECTRONICS AMERICA·Filed 1997·Granted Mar 28, 2000·38 cites·2 claims
- 0870US6627947B1Compact single-poly two transistor EEPROM cellLATTICE SEMICONDUCTOR CORP·Filed 2000·Granted Sep 30, 2003·16 cites·6 claims
- 0967US6693830B1Single-poly two-transistor EEPROM cell with differentially doped floating gateLATTICE SEMICONDUCTOR CORP·Filed 2001·Granted Feb 17, 2004·15 cites·23 claims
- 1066US7186658B2Method and resulting structure for PCMO film to obtain etching rate and mask to selectively by inductively coupled plasmaWINBOND ELECTRONICS CORP·Filed 2004·Granted Mar 6, 2007·11 cites·24 claims
- 1152US5920506AMethod and apparatus for bulk preprogramming flash memory cells with minimal source and drain currentsHYUNDAI ELECTRONICS AMERICA·Filed 1997·Granted Jul 6, 1999·15 cites·14 claims
- 1240US5899726AMethod of forming oxide isolation in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 1997·Granted May 4, 1999·8 cites·11 claims
- 1330US5866467AMethod of improving oxide isolation in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 1997·Granted Feb 2, 1999·0 cites·6 claims
- 1430US5818082AE2 PROM device having erase gate in oxide isolation region in shallow trench and method of manufacture thereofADVANCED MICRO DEVICES INC·Filed 1996·Granted Oct 6, 1998·0 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →