Inventor · disambiguated record
Daniel Ng
Also filed as: NG DANIEL · NG DANIEL S
64 granted patents·2 pending applications·1,083 citations·filing 1997–2018
99Inventor score
Top patents by PatentIndex Score
66 records- 0197US8753935B1High frequency switching MOSFETs with low output capacitance using a depletable P-shieldBOBDE MADHUR·Filed 2012·Granted Jun 17, 2014·33 cites·20 claims
- 0297US5929481AHigh density trench DMOS transistor with trench bottom implantSILICONIX INC·Filed 1997·Granted Jul 27, 1999·254 cites·6 claims
- 0396US9502554B2High frequency switching MOSFETs with low output capacitance using a depletable P-shieldALPHA & OMEGA SEMICONDUCTOR·Filed 2016·Granted Nov 22, 2016·12 cites·12 claims
- 0496US8946816B2High frequency switching MOSFETs with low output capacitance using a depletable P-shieldALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Feb 3, 2015·20 cites·14 claims
- 0596US8785278B2Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contactYILMAZ HAMZA·Filed 2012·Granted Jul 22, 2014·22 cites·21 claims
- 0696US8431470B2Approach to integrate Schottky in MOSFETLUI SIK·Filed 2011·Granted Apr 30, 2013·34 cites·24 claims
- 0795US9748375B2Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contactALPHA & OMEGA SEMICONDUCTOR·Filed 2016·Granted Aug 29, 2017·9 cites·9 claims
- 0895US9252264B2High frequency switching MOSFETs with low output capacitance using a depletable P-shieldALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Feb 2, 2016·13 cites·12 claims
- 0995US5912490AMOSFET having buried shield plate for reduced gate/drain capacitanceSPECTRIAN·Filed 1997·Granted Jun 15, 1999·167 cites·15 claims
- 1094US8828857B2Approach to integrate Schottky in MOSFETALPHA & OMEGA SEMICONDUCTOR·Filed 2013·Granted Sep 9, 2014·18 cites·20 claims
- 1194US7943989B2Nano-tube MOSFET technology and devicesALPHA & OMEGA SEMICONDUCTOR·Filed 2008·Granted May 17, 2011·25 cites·18 claims
- 1294US7504676B2Planar split-gate high-performance MOSFET structure and manufacturing methodALPHA & OMEGA SEMICONDUCTOR·Filed 2006·Granted Mar 17, 2009·21 cites·23 claims
- 1393US8748268B1Method of making MOSFET integrated with schottky diode with simplified one-time top-contact trench etchingPAN JI·Filed 2012·Granted Jun 10, 2014·13 cites·8 claims
- 1492US9484452B2Integrating enhancement mode depleted accumulation/inversion channel devices with MOSFETsALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Nov 1, 2016·12 cites·9 claims
- 1592US9252239B2Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contactsYILMAZ HAMZA·Filed 2014·Granted Feb 2, 2016·10 cites·13 claims
- 1692US8779510B2Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contactsYILMAZ HAMZA·Filed 2010·Granted Jul 15, 2014·16 cites·18 claims
- 1792US7436022B2Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layoutALPHA & OMEGA SEMICONDUCTORS L·Filed 2006·Granted Oct 14, 2008·35 cites·39 claims
- 1891US8643071B2Integrated snubber in a single poly MOSFETPAN JI·Filed 2012·Granted Feb 4, 2014·14 cites·21 claims
- 1991US8399925B2Termination structure with multiple embedded potential spreading capacitive structures for trench MOSFET and methodWANG XIAOBIN·Filed 2010·Granted Mar 19, 2013·11 cites·3 claims
- 2090US9006053B2Method of making MOSFET integrated with schottky diode with simplified one-time top-contact trench etchingALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Apr 14, 2015·8 cites·8 claims
- 2190US8785270B2Integrating schottky diode into power MOSFETALPHA & OMEGA SEMICONDUCTOR·Filed 2013·Granted Jul 22, 2014·10 cites·6 claims
- 2290US8174283B2Calibration technique for measuring gate resistance of power MOS gate device at wafer levelBHALLA ANUP·Filed 2009·Granted May 8, 2012·12 cites·8 claims
- 2389US9281394B2Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contactALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Mar 8, 2016·6 cites·19 claims
- 2489US8692322B2Flexible Crss adjustment in a SGT MOSFET to smooth waveforms and to avoid EMI in DC-DC applicationPAN JI·Filed 2012·Granted Apr 8, 2014·9 cites·13 claims
- 2589US8163618B2Power MOSFET device structure for high frequency applicationsBHALLA ANUP·Filed 2010·Granted Apr 24, 2012·8 cites·6 claims
- 2689US7799646B2Integration of a sense FET into a discrete power MOSFETALPHA & OMEGA SEMICONDUCTOR·Filed 2008·Granted Sep 21, 2010·16 cites·12 claims
- 2788US8502302B2Integrating Schottky diode into power MOSFETSU YI·Filed 2011·Granted Aug 6, 2013·9 cites·9 claims
- 2888US7902604B2Configuration of gate to drain (GD) clamp and ESD protection circuit for power device breakdown protectionALPHA & OMEGA SEMICONDUCTOR·Filed 2009·Granted Mar 8, 2011·14 cites·14 claims
- 2986US8829603B2Shielded gate trench MOSFET packageLUI SIK·Filed 2011·Granted Sep 9, 2014·8 cites·17 claims
- 3086US8759908B2Two-dimensional shielded gate transistor device and method of manufactureLUI SIK·Filed 2011·Granted Jun 24, 2014·8 cites·27 claims
- 3185US8963233B2Power MOSFET device structure for high frequency applicationsBHALLA ANUP·Filed 2012·Granted Feb 24, 2015·5 cites·7 claims
- 3285US6107160AMOSFET having buried shield plate for reduced gate/drain capacitanceSPECTRIAN CORP·Filed 1998·Granted Aug 22, 2000·70 cites·7 claims
- 3384US8053298B2Planar split-gate high-performance MOSFET structure and manufacturing methodALPHA & OMEGA SEMICONDUCTOR·Filed 2009·Granted Nov 8, 2011·7 cites·6 claims
- 3484US7659570B2Power MOSFET device structure for high frequency applicationsALPHA & OMEGA SEMICONDUCTOR·Filed 2005·Granted Feb 9, 2010·8 cites·16 claims
- 3583US10418899B2MOSFET switch circuit for slow switching applicationALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Sep 17, 2019·6 cites·18 claims
- 3683US9136370B2Shielded gate trench MOSFET packageALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Sep 15, 2015·5 cites·17 claims
- 3783US7535021B2Calibration technique for measuring gate resistance of power MOS gate device at water levelALPHA & OMEGA SEMICONDUCTOR·Filed 2005·Granted May 19, 2009·7 cites·9 claims
- 3883US5898198ARF power device having voltage controlled linearitySPECTRIAN·Filed 1997·Granted Apr 27, 1999·75 cites·48 claims
- 3982US9318603B2Method of making a low-Rdson vertical power MOSFET deviceALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Apr 19, 2016·5 cites·5 claims
- 4082US8610235B2Trench MOSFET with integrated Schottky barrier diodeCALAFUT DANIEL·Filed 2011·Granted Dec 17, 2013·7 cites·27 claims
- 4177US9356132B2Integrating Schottky diode into power MOSFETALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted May 31, 2016·3 cites·14 claims
- 4276US10192982B2Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contactALPHA & OMEGA SEMICONDUCTOR·Filed 2017·Granted Jan 29, 2019·1 cites·13 claims
- 4376US8802509B2Configuration of gate to drain (GD) clamp and ESD protection circuit for power device breakdown protectionSU YI·Filed 2011·Granted Aug 12, 2014·4 cites·3 claims
- 4476US8053808B2Layouts for multiple-stage ESD protection circuits for integrating with semiconductor power deviceALPHA & OMEGA SEMICONDUCTOR·Filed 2007·Granted Nov 8, 2011·7 cites·17 claims
- 4574US10608092B2Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contactsALPHA & OMEGA SEMICONDUCTOR·Filed 2017·Granted Mar 31, 2020·1 cites·5 claims
- 4674US7952144B2Integration of a sense FET into a discrete power MOSFETALPHA & OMEGA SEMICONDUCTOR·Filed 2010·Granted May 31, 2011·3 cites·9 claims
- 4773US8354316B2Reduced mask configuration for power mosfets with electrostatic discharge (ESD) circuit protectionBHALLA ANUP·Filed 2010·Granted Jan 15, 2013·3 cites·10 claims
- 4872US8709893B2Method of making a low-Rdson vertical power MOSFET deviceSU YI·Filed 2011·Granted Apr 29, 2014·3 cites·12 claims
- 4972US8362585B1Junction barrier Schottky diode with enforced upper contact structure and method for robust packagingALPHA & OMEGA SEMICONDUCTOR·Filed 2011·Granted Jan 29, 2013·3 cites·23 claims
- 5071US9570404B2Flexible Crss adjustment in a SGT MOSFET to smooth waveforms and to avoid EMI in DC-DC applicationPANG JI·Filed 2014·Granted Feb 14, 2017·4 cites·7 claims
Showing the top 50 of 66 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →