Inventor · disambiguated record
Zi-Ang Su
Also filed as: Su zi-ang
12 granted patents·13 pending applications·4 citations·filing 2020–2025
84Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD25
Top patents by PatentIndex Score
25 records- 0196US11289591B1Bipolar junction deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·4 cites·20 claims
- 0286US12324210B2Bipolar junction transistor with gate over terminalsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 3, 2025·0 cites·20 claims
- 0383US12317602B2Forming ESD devices using multi-gate compatible processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 27, 2025·0 cites·20 claims
- 0483US2025287701A1Forming esd devices using multi-gate compatible processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0582US2025366100A1Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0681US12051729B2Bipolar junction transistor with gate over terminalsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 30, 2024·0 cites·20 claims
- 0781US2025366170A1Nanosheet devices and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0880US2025359080A1Varactors having increased tuning ratioTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0978US11948936B2Forming ESD devices using multi-gate compatible processessTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 2, 2024·0 cites·20 claims
- 1077US11830938B2Bipolar junction deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 28, 2023·0 cites·20 claims
- 1174US11843038B2Bipolar junction transistor with gate over terminalsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 12, 2023·0 cites·20 claims
- 1272US11600719B2Bipolar junction deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 7, 2023·0 cites·20 claims
- 1372US2024369421A1Complementary bipolar junction transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1471US2024014290A1Method and structure for diodes with backside contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1570US11637099B2Forming ESD devices using multi-gate compatible processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 25, 2023·0 cites·20 claims
- 1669US11239330B2Bipolar junction transistor with gate over terminalsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 1, 2022·0 cites·20 claims
- 1769US2025015159A1Varactors having increased tuning ratioTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1868US11837459B2Method and structure for diodes with backside contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 5, 2023·0 cites·20 claims
- 1968US2024055424A1Nanosheet devices and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2064US2023282702A1Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2162US12078551B2Complementary bipolar junction transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 3, 2024·0 cites·20 claims
- 2262US2025234634A1Bipolar junction transistor with dielectric isolation structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2358US2025132250A1Electrical interconnection structures for preventing fixed positive charges in diode structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2457US2025133756A1Doped regions for neutralizing electrons in diode structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2553US2024145466A1Bipolar junction transistor structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →