Inventor · disambiguated record
Charles R. Eddy, Jr.
Also filed as: EDDY CHARLES · EDDY JR CHARLES R
37 granted patents·7 pending applications·159 citations·filing 2004–2022
97Inventor score
Top patents by PatentIndex Score
44 records- 0195US8900939B2Transistor with enhanced channel charge inducing material layer and threshold voltage controlKUB FRANCIS J·Filed 2014·Granted Dec 2, 2014·17 cites·5 claims
- 0294US8384129B2Transistor with enhanced channel charge inducing material layer and threshold voltage controlUS NAVY·Filed 2010·Granted Feb 26, 2013·19 cites·25 claims
- 0392US7928471B2Group III-nitride growth on silicon or silicon germanium substrates and method and devices thereforUS NAVY·Filed 2006·Granted Apr 19, 2011·21 cites·38 claims
- 0489US7648170B2Interchangeable suspension systemHONDA MOTOR CO LTD·Filed 2006·Granted Jan 19, 2010·30 cites·25 claims
- 0588US9099375B2Diamond and diamond composite materialKUB FRANCIS J·Filed 2013·Granted Aug 4, 2015·10 cites·23 claims
- 0686US9111786B1Complementary field effect transistors using gallium polar and nitrogen polar III-nitride materialKUB FRANCIS J·Filed 2014·Granted Aug 18, 2015·4 cites·8 claims
- 0785US9018056B2Complementary field effect transistors using gallium polar and nitrogen polar III-nitride materialKUB FRANCIS J·Filed 2014·Granted Apr 28, 2015·4 cites·5 claims
- 0885US8648390B2Transistor with enhanced channel charge inducing material layer and threshold voltage controlKUB FRANCIS J·Filed 2013·Granted Feb 11, 2014·6 cites·31 claims
- 0983US8679248B2GaN whiskers and methods of growing them from solutionFEIGELSON BORIS N·Filed 2010·Granted Mar 25, 2014·2 cites·9 claims
- 1081US9396941B2Method for vertical and lateral control of III-N polarityHITE JENNIFER K·Filed 2011·Granted Jul 19, 2016·7 cites·9 claims
- 1177US8247843B2GaN-based permeable base transistor and method of fabricationGUNTER LIBERTY L·Filed 2008·Granted Aug 21, 2012·5 cites·6 claims
- 1275US8237152B2White light emitting device based on polariton laserMASTRO MICHAEL A·Filed 2009·Granted Aug 7, 2012·5 cites·27 claims
- 1374US8518491B2Preparation of epitaxial graphene surfaces for atomic layer deposition of dielectricsGARCES NELSON·Filed 2011·Granted Aug 27, 2013·3 cites·12 claims
- 1474US7790230B2Metal chloride seeded growth of electronic and optical materialsUS NAVY·Filed 2008·Granted Sep 7, 2010·2 cites·16 claims
- 1572US11219262B2System and method for providing safety assistance in vehicleHONDA MOTOR CO LTD·Filed 2019·Granted Jan 11, 2022·2 cites·15 claims
- 1672US2022406591A1Low Temperature Plasma-Assisted Atomic Layer Epitaxy of Hexagonal InN Films and its Alloys with AlNUS GOV SEC NAVY·Filed 2022·Application pending·0 cites
- 1770US10494738B2Growth of crystalline materials on two-dimensional inert materialsUS GOV SEC NAVY·Filed 2019·Granted Dec 3, 2019·0 cites·3 claims
- 1870US9117736B2Diamond and diamond composite materialKUB FRANCIS J·Filed 2013·Granted Aug 25, 2015·2 cites·34 claims
- 1967US8999060B2Method of growing GaN whiskers from a gallium-containing solvent at low pressure and low temperatureFEIGELSON BORIS N·Filed 2013·Granted Apr 7, 2015·0 cites·9 claims
- 2064US10266963B2Growth of crystalline materials on two-dimensional inert materialsNEPAL NEERAJ·Filed 2014·Granted Apr 23, 2019·0 cites·4 claims
- 2164US9028919B2Epitaxial graphene surface preparation for atomic layer deposition of dielectricsGARCES NELSON·Filed 2014·Granted May 12, 2015·1 cites·6 claims
- 2264US8652255B2Method of producing epitaxial layers with low basal plane dislocation concentrationsSTAHLBUSH ROBERT E·Filed 2008·Granted Feb 18, 2014·4 cites·17 claims
- 2363US2020294792A1Indium Nitride MaterialUS GOV SEC NAVY·Filed 2020·Application pending·0 cites
- 2462US2015362763A1Variable Emittance WindowWHEELER VIRGINIA D·Filed 2015·Application pending·0 cites
- 2561US10256090B2Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch processMYERS WARD RACHAEL L·Filed 2014·Granted Apr 9, 2019·1 cites·11 claims
- 2661US10256094B2Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch processMYERS WARD RACHAEL L·Filed 2014·Granted Apr 9, 2019·1 cites·12 claims
- 2761US7470989B2Technique for perfecting the active regions of wide bandgap semiconductor nitride devicesUS NAVY·Filed 2006·Granted Dec 30, 2008·1 cites·18 claims
- 2860US7413958B2GaN-based permeable base transistor and method of fabricationBAE SYSTEMS INFORMATION·Filed 2004·Granted Aug 19, 2008·6 cites·16 claims
- 2959US9464366B2Reduction of basal plane dislocations in epitaxial SiCMYERS-WARD RACHAEL L·Filed 2010·Granted Oct 11, 2016·1 cites·18 claims
- 3057US11443942B2Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN films and its alloys with AIN at low temperaturesUS GOV SEC NAVY·Filed 2017·Granted Sep 13, 2022·0 cites·19 claims
- 3156US9105499B1Complementary field effect transistors using gallium polar and nitrogen polar III-nitride materialKUB FRANCIS J·Filed 2015·Granted Aug 11, 2015·0 cites·12 claims
- 3255US2017261376A1Method of Making a Variable Emittance WindowUS GOV SEC NAVY·Filed 2017·Application pending·0 cites
- 3353USRE42955EGaN-based permeable base transistor and method of fabricationGUNTER LIBERTY L·Filed 2004·Granted Nov 22, 2011·4 cites·16 claims
- 3452US9679766B2Method for vertical and lateral control of III-N polarityUS NAVY·Filed 2016·Granted Jun 13, 2017·0 cites·18 claims
- 3552US8920877B2Preparation of epitaxial graphene surfaces for atomic layer deposition of dielectricsGARCES NELSON·Filed 2013·Granted Dec 30, 2014·0 cites·8 claims
- 3651US11499310B2Gait assistance slabHONDA MOTOR CO LTD·Filed 2020·Granted Nov 15, 2022·0 cites·14 claims
- 3750US9773666B2Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN and its alloys with AIN at low temperaturesNEPAL NEERAJ·Filed 2013·Granted Sep 26, 2017·0 cites·1 claims
- 3848US2015362374A1Atomic Layer Deposition of Vanadium Oxide for Microbolometer and ImagerWHEELER VIRGINIA D·Filed 2015·Application pending·0 cites
- 3946US7198970B2Technique for perfecting the active regions of wide bandgap semiconductor nitride devicesUS NAVY·Filed 2004·Granted Apr 3, 2007·1 cites·14 claims
- 4044US11467556B2System and method for projection of light pattern on work-pieceHONDA MOTOR CO LTD·Filed 2019·Granted Oct 11, 2022·0 cites·16 claims
- 4144US2016120472A1Low Dissolution Rate Device and MethodUS GOVERNMENT·Filed 2015·Application pending·0 cites
- 4244US2010316342A1Photonic crystal based optical modulator integrated for use in electronic circuitsCASEY JAMES A·Filed 2009·Application pending·0 cites
- 4343US10937649B2Epitaxial growth of cubic and hexagonal InN films and their alloys with AlN and GaNNEPAL NEERAJ·Filed 2014·Granted Mar 2, 2021·0 cites·10 claims
- 4439US8603243B2Tracking carbon to silicon ratio in situ during silicon carbide growthVANMIL BRENDA L·Filed 2008·Granted Dec 10, 2013·0 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →