Inventor · disambiguated record
Dai-Liang Ma
Also filed as: MA DAI-LIANG
10 granted patents·9 pending applications·3 citations·filing 2012–2024
77Inventor score
Files withNAT CHUNG SHAN INST SCIENCE & TECH8TAISIC MAT CORP6NAT CHUNG SHAN INST OF SCIENCE AND TECH2CHUNG SHAN INST OF SCIENCE1HSIUNG CHIH-YUNG1
Top patents by PatentIndex Score
19 records- 0186US9689087B1Method of making photonic crystalNAT CHUNG SHAN INST OF SCIENCE AND TECH·Filed 2015·Granted Jun 27, 2017·3 cites·10 claims
- 0262US2025092573A1Method for purifying graphite material, method for purifying graphite crucible based on silicon carbide crystal growth, and method for manufacturing high-purity silicon carbideTAISIC MAT CORP·Filed 2024·Application pending·0 cites
- 0362US2025092564A1Device and method for preparing silicon carbide crystalTAISIC MAT CORP·Filed 2024·Application pending·0 cites
- 0462US2025092570A1Silicon carbide crystal growth system and method thereofTAISIC MAT CORP·Filed 2024·Application pending·0 cites
- 0561US11130152B2Method for the formation of tantalum carbides on graphite substrateNAT CHUNG SHAN INST SCIENCE & TECH·Filed 2019·Granted Sep 28, 2021·0 cites·13 claims
- 0660US12297561B2Semi-insulating single-crystal silicon carbide bulk material and powderTAISIC MAT CORP·Filed 2021·Granted May 13, 2025·0 cites·2 claims
- 0760US11072871B2Preparation apparatus for silicon carbide crystals comprising a circular cylinder, a doping tablet, and a plateNAT CHUNG SHAN INST SCIENCE & TECH·Filed 2019·Granted Jul 27, 2021·0 cites·10 claims
- 0853US11661675B2High-purity semi-insulating single-crystal silicon carbide wafer and crystalTAISIC MAT CORP·Filed 2021·Granted May 30, 2023·0 cites·16 claims
- 0949US2015132486A1Vapor deposition apparatus and method using the sameCHUNG SHAN INST OF SCIENCE·Filed 2013·Application pending·0 cites
- 1049US2016168750A1Method of producing high-purity carbide moldNAT INST CHUNG SHAN SCIENCE & TECHNOLOGY·Filed 2014·Application pending·0 cites
- 1147US10385443B2Device for growing monocrystalline crystalNAT CHUNG SHAN INST SCIENCE & TECH·Filed 2016·Granted Aug 20, 2019·0 cites·10 claims
- 1246US10246334B2Method of producing heterophase graphiteNAT CHUNG SHAN INST SCIENCE & TECH·Filed 2017·Granted Apr 2, 2019·0 cites·10 claims
- 1345US12098477B2Manufacturing method of semi-insulating single-crystal silicon carbide powderTAISIC MAT CORP·Filed 2021·Granted Sep 24, 2024·0 cites·9 claims
- 1445US2019186045A1Device for growing silicon carbide of specific shapeNAT CHUNG SHAN INST SCIENCE & TECH·Filed 2018·Application pending·0 cites
- 1543US2013263785A1Crucible for Growing CrystalsHSIUNG CHIH-YUNG·Filed 2012·Application pending·0 cites
- 1642US11049717B2Method for fabricating ultra-thin graphite film on silicon carbide substrate from siloxane-coupling-group-containing polyamic acid solutionNAT CHUNG SHAN INST SCIENCE & TECH·Filed 2018·Granted Jun 29, 2021·0 cites·8 claims
- 1741US10612159B2Device for measuring distribution of thermal field in crucibleNAT CHUNG SHAN INST SCIENCE & TECH·Filed 2018·Granted Apr 7, 2020·0 cites·9 claims
- 1837US2018087186A1Method of producing carbide raw materialNAT CHUNG SHAN INST SCIENCE & TECH·Filed 2016·Application pending·0 cites
- 1924US2017137962A1Fabrication Method for Growing Single Crystal of Multi-Type CompoundNAT CHUNG-SHAN INST OF SCIENCE AND TECH·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →