Inventor · disambiguated record
Klaus-Dieter Morhard
Also filed as: MORHARD KLAUS-DIETER
11 granted patents·150 citations·filing 1998–2006
90Inventor score
Top patents by PatentIndex Score
11 records- 0183US6828191B1Trench capacitor with an insulation collar and method for producing a trench capacitorSIEMENS AG·Filed 1999·Granted Dec 7, 2004·53 cites·8 claims
- 0278US6509599B1Trench capacitor with insulation collar and method for producing the trench capacitorSIEMENS AG·Filed 1999·Granted Jan 21, 2003·41 cites·5 claims
- 0373US7122434B2Method for generating an electrical contact with buried track conductorsINFINEON TECHNOLOGIES AG·Filed 2005·Granted Oct 17, 2006·5 cites·6 claims
- 0471US7618867B2Method of forming a doped portion of a semiconductor and method of forming a transistorINFINEON TECHNOLOGIES AG·Filed 2006·Granted Nov 17, 2009·5 cites·25 claims
- 0569US6544856B2Method for increasing the trench capacitanceINFINEON TECHNOLOGIES AG·Filed 2001·Granted Apr 8, 2003·14 cites·6 claims
- 0660US6548850B1Trench capacitor configuration and method of producing itINFINEON TECHNOLOGIES AG·Filed 2000·Granted Apr 15, 2003·8 cites·18 claims
- 0753US6909153B2Semiconductor structure having buried track conductors, and method for generating an electrical contact with buried track conductorsINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jun 21, 2005·5 cites·6 claims
- 0843US7452821B2Method for the formation of contact holes for a number of contact regions for components integrated in a substrateINFINEON TECHNOLOGIES AG·Filed 2002·Granted Nov 18, 2008·2 cites·22 claims
- 0942US6068928AMethod for producing a polycrystalline silicon structure and polycrystalline silicon layer to be produced by the methodSIEMENS AG·Filed 1998·Granted May 30, 2000·8 cites·10 claims
- 1040US6329703B1Contact between a monocrystalline silicon region and a polycrystalline silicon structure and method for producing such a contactINFINEON TECHNOLOGIES AG·Filed 1998·Granted Dec 11, 2001·9 cites·11 claims
- 1135US7030017B2Method for the planarization of a semiconductor structureINFINEON TECHNOLOGIES AG·Filed 2003·Granted Apr 18, 2006·0 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →