Inventor · disambiguated record
Masaki Okajima
Also filed as: OKAJIMA MASAKI
17 granted patents·3 pending applications·351 citations·filing 1984–2006
95Inventor score
Top patents by PatentIndex Score
20 records- 0183US5739946ADisplay deviceTOSHIBA KK·Filed 1996·Granted Apr 14, 1998·64 cites·17 claims
- 0280US4635268ASemiconductor laser device having a double heterojunction structureTOSHIBA KK·Filed 1984·Granted Jan 6, 1987·29 cites·8 claims
- 0376US4706101ALight emitting diode formed of a compound semiconductor materialTOSHIBA KK·Filed 1985·Granted Nov 10, 1987·36 cites·10 claims
- 0475US5282218ASemiconductor laser deviceTOSHIBA KK·Filed 1992·Granted Jan 25, 1994·33 cites·20 claims
- 0575US4691321ASemiconductor laser device having current confining and built-in waveguide structureTOSHIBA KK·Filed 1984·Granted Sep 1, 1987·20 cites·21 claims
- 0672US5406574ASemiconductor laser deviceTOSHIBA KK·Filed 1993·Granted Apr 11, 1995·28 cites·5 claims
- 0769US5065404ATransverse-mode oscillation semiconductor laser deviceTOSHIBA KK·Filed 1990·Granted Nov 12, 1991·25 cites·23 claims
- 0868US4647953ASemiconductor laser device and method for manufacturing the sameTOKYO SHIBAURA ELECTRIC CO·Filed 1984·Granted Mar 3, 1987·18 cites·9 claims
- 0964US5058120AVisible light emitting semiconductor laser with inverse mesa-shaped groove sectionTOSHIBA KK·Filed 1990·Granted Oct 15, 1991·21 cites·16 claims
- 1064US4799228ATransverse-mode stabilized semiconductor laser diode with slab-coupled waveguideTOSHIBA KK·Filed 1986·Granted Jan 17, 1989·17 cites·7 claims
- 1159US4730925AMethod of spectroscopically determining the composition of molten ironNIPPON STEEL CORP·Filed 1986·Granted Mar 15, 1988·20 cites·9 claims
- 1254US7455822B2Method for production of siliconNIPPON STEEL CORP·Filed 2003·Granted Nov 25, 2008·2 cites·20 claims
- 1352US5377291AWavelength converting optical deviceTOSHIBA KK·Filed 1989·Granted Dec 27, 1994·14 cites·23 claims
- 1451US7662356B2Method of refining SiNIPPON STEEL MATERIALS CO LTD·Filed 2006·Granted Feb 16, 2010·0 cites·8 claims
- 1550US5202895ASemiconductor device having an active layer made of ingaalp materialTOSHIBA KK·Filed 1991·Granted Apr 13, 1993·12 cites·11 claims
- 1649US5305341ASemiconductor laser whose active layer has an ordered structureTOSHIBA KK·Filed 1992·Granted Apr 19, 1994·12 cites·19 claims
- 1746US8038973B2High purity silicon production system and production methodNIPPON STEEL MATERIALS CO LTD·Filed 2006·Granted Oct 18, 2011·0 cites·18 claims
- 1845US2008311020A1Method for Producing High Purity SiliconNIPPON STEEL MATERIALS CO LTD·Filed 2006·Application pending·0 cites
- 1945US2008247936A1Method For Producing High Purity SiliconNIPPON STEEL MATERIALS CO LTD·Filed 2006·Application pending·0 cites
- 2045US2008274031A1Method for Producing High Purity SiliconNIPPON STEEL MATERIALS CO LTD·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →