Inventor · disambiguated record
Minoru Kubo
Also filed as: KUBO MINORU
41 granted patents·3 pending applications·1,340 citations·filing 1985–2004
98Inventor score
Top patents by PatentIndex Score
44 records- 0198US6399970B2FET having a Si/SiGeC heterojunction channelMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Jun 4, 2002·279 cites·11 claims
- 0298US6190975B1Method of forming HCMOS devices with a silicon-germanium-carbon compound semiconductor layerMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Feb 20, 2001·230 cites·5 claims
- 0395US6852602B2Semiconductor crystal film and method for preparation thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Feb 8, 2005·103 cites·23 claims
- 0493US6674100B2SiGeC-based CMOSFET with separate heterojunctionsMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Jan 6, 2004·58 cites·10 claims
- 0592US6597016B1Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Jul 22, 2003·53 cites·11 claims
- 0691US5751013ASemiconductor light-emitting device and production method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted May 12, 1998·72 cites·11 claims
- 0790US6844227B2Semiconductor devices and method for manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Jan 18, 2005·48 cites·1 claims
- 0886US6403976B1Semiconductor crystal, fabrication method thereof, and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Jun 11, 2002·37 cites·4 claims
- 0984US6965107B2Semiconductor-based encapsulated infrared sensor and electronic deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Nov 15, 2005·31 cites·9 claims
- 1083US6759697B2Heterojunction bipolar transistorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jul 6, 2004·24 cites·13 claims
- 1183US6645836B2Method of forming a semiconductor wafer having a crystalline layer thereon containing silicon, germanium and carbonMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Nov 11, 2003·25 cites·10 claims
- 1283US6537369B1SiGeC semiconductor crystal and production method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Mar 25, 2003·24 cites·9 claims
- 1382US6890834B2Electronic device and method for manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted May 10, 2005·28 cites·20 claims
- 1472US6133058AFabrication of semiconductor light-emitting deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Oct 17, 2000·27 cites·3 claims
- 1571US6815735B2Semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Nov 9, 2004·16 cites·15 claims
- 1670US5895225ASemiconductor light-emitting device and production method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Apr 20, 1999·25 cites·6 claims
- 1769US6136626ASemiconductor light-emitting device and production method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Oct 24, 2000·34 cites·8 claims
- 1868US6756278B2Lateral heterojunction bipolar transistor and method of fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Jun 29, 2004·12 cites·12 claims
- 1965US7170110B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Jan 30, 2007·9 cites·5 claims
- 2063US7105449B1Method for cleaning substrate and method for producing semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Sep 12, 2006·8 cites·11 claims
- 2163US6563146B1Lateral heterojunction bipolar transistor and method of fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted May 13, 2003·9 cites·3 claims
- 2262US6649496B2Production method for semiconductor crystalMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Nov 18, 2003·4 cites·6 claims
- 2362US4885260AMethod of laser enhanced vapor phase growth for compound semiconductorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1988·Granted Dec 5, 1989·31 cites·4 claims
- 2461US6872989B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Mar 29, 2005·7 cites·10 claims
- 2561US6660393B2SiGeC semiconductor crystals and the method producing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Dec 9, 2003·6 cites·3 claims
- 2660US6720587B2Structure evaluation method, method for manufacturing semiconductor devices, and recording mediumMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Apr 13, 2004·7 cites·4 claims
- 2759US7244972B2Semiconductor devices and method for manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Jul 17, 2007·7 cites·17 claims
- 2856US6277657B1Apparatus for fabricating semiconductor device and fabrication method thereforMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Aug 21, 2001·20 cites·23 claims
- 2955US5120393AMethod for molecular-beam epitaxial growthMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1991·Granted Jun 9, 1992·13 cites·2 claims
- 3054US5705831ASemiconductor light-emitting device and production method thereof, and crystal-growing method suitable for the production methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Jan 6, 1998·19 cites·10 claims
- 3153US5274248ALight-emitting device with II-VI compoundsMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1992·Granted Dec 28, 1993·15 cites·8 claims
- 3252US5863834ASemiconductor device and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Jan 26, 1999·18 cites·6 claims
- 3351US5619520ASemiconductor laserMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Apr 8, 1997·16 cites·14 claims
- 3450US7135721B2Heterojunction bipolar transistor having reduced driving voltage requirementsMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Nov 14, 2006·3 cites·13 claims
- 3549US6919253B2Method of forming a semiconductor device including simultaneously forming a single crystalline epitaxial layer and a polycrystalline or amorphous layerMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jul 19, 2005·2 cites·8 claims
- 3648US6930026B2Method of forming a semiconductor wafer having a crystalline layer thereon containing silicon, germanium and carbonMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Aug 16, 2005·1 cites·10 claims
- 3748US6620665B1Method for fabricating semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Sep 16, 2003·13 cites·14 claims
- 3843US7049198B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted May 23, 2006·0 cites·3 claims
- 3942US7248544B2Optical head and recording and/or reproducing apparatus employing sameSONY CORP·Filed 2004·Granted Jul 24, 2007·0 cites·30 claims
- 4039US2002189535A1Method for manufacturing semiconductor crystal filmMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Application pending·0 cites
- 4138US2002163013A1Heterojunction bipolar transistorFiled 2001·Application pending·0 cites
- 4234US5372970AMethod for epitaxially growing a II-VI compound semiconductorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1993·Granted Dec 13, 1994·5 cites·8 claims
- 4331US2002179946A1P-channel field-effect transistorFiled 2001·Application pending·0 cites
- 4430US4702781ALiquid phase epitaxial growth methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1985·Granted Oct 27, 1987·1 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →