Inventor · disambiguated record
Allen J. Leith
Also filed as: LEITH ALLEN J · LEITH ALLEN JOHN
12 granted patents·3 pending applications·104 citations·filing 2003–2019
88Inventor score
Top patents by PatentIndex Score
15 records- 0195US7205187B2Micro-feature fill process and apparatus using hexachlorodisilane or other chlorine-containing silicon precursorTOKYO ELECTRON LTD·Filed 2005·Granted Apr 17, 2007·60 cites·35 claims
- 0276US7358194B2Sequential deposition process for forming Si-containing filmsTOKYO ELECTRON LTD·Filed 2005·Granted Apr 15, 2008·5 cites·31 claims
- 0375US8263474B2Reduced defect silicon or silicon germanium deposition in micro-featuresDIP ANTHONY·Filed 2007·Granted Sep 11, 2012·7 cites·16 claims
- 0475US7501349B2Sequential oxide removal using fluorine and hydrogenTOKYO ELECTRON LTD·Filed 2006·Granted Mar 10, 2009·5 cites·24 claims
- 0575US7468311B2Deposition of silicon-containing films from hexachlorodisilaneTOKYO ELECTRON LTD·Filed 2003·Granted Dec 23, 2008·17 cites·29 claims
- 0666US9735019B2Process gas enhancement for beam treatment of a substrateTEL EPION INC·Filed 2015·Granted Aug 15, 2017·1 cites·20 claims
- 0762US10861674B2Compensated location specific processing apparatus and methodTEL EPION INC·Filed 2019·Granted Dec 8, 2020·0 cites·19 claims
- 0862US7737051B2Silicon germanium surface layer for high-k dielectric integrationTOKYO ELECTRON LTD·Filed 2004·Granted Jun 15, 2010·8 cites·21 claims
- 0961US7405140B2Low temperature formation of patterned epitaxial Si containing filmsTOKYO ELECTRON LTD·Filed 2005·Granted Jul 29, 2008·1 cites·26 claims
- 1056US10497540B2Compensated location specific processing apparatus and methodTEL EPION INC·Filed 2018·Granted Dec 3, 2019·0 cites·19 claims
- 1142US7524769B2Method and system for removing an oxide from a substrateTOKYO ELECTRON LTD·Filed 2005·Granted Apr 28, 2009·0 cites·24 claims
- 1241US2007039924A1Low-temperature oxide removal using fluorineTOKYO ELECTRON LTD·Filed 2005·Application pending·0 cites
- 1341US2007048956A1Interrupted deposition process for selective deposition of Si-containing filmsTOKYO ELECTRON LTD·Filed 2005·Application pending·0 cites
- 1439US10256095B2Method for high throughput using beam scan size and beam position in gas cluster ion beam processing systemTEL EPION INC·Filed 2016·Granted Apr 9, 2019·0 cites·11 claims
- 1538US2005199872A1Silicon-germanium thin layer semiconductor structure with variable silicon-germanium composition and method of fabricationTOKYO ELECTRON LTD OF TBS BROA·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →