Inventor · disambiguated record
Zhang Haiyang
Also filed as: HAIYANG ZHANG
4 granted patents·14 citations·filing 2011–2021
67Inventor score
Top patents by PatentIndex Score
4 records- 0183US10685838B1Semiconductor structure providing for an increased pattern density on a substrate and method for forming sameSEMICONDUCTOR MFG INT BEIJING CORP·Filed 2019·Granted Jun 16, 2020·10 cites·18 claims
- 0273US11996460B2Semiconductor structure and forming method for thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2021·Granted May 28, 2024·1 cites·19 claims
- 0362US8835325B2Method for manufacturing a semiconductor deviceHAIYANG ZHANG·Filed 2011·Granted Sep 16, 2014·3 cites·16 claims
- 0444US11735429B2Method for forming semiconductor structureSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2020·Granted Aug 22, 2023·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →