Inventor · disambiguated record
Angelika Koprowski
Also filed as: KOPROWSKI ANGELIKA
9 granted patents·7 pending applications·10 citations·filing 2012–2025
80Inventor score
Top patents by PatentIndex Score
16 records- 0180US9355958B2Semiconductor device having a corrosion-resistant metallization and method for manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2013·Granted May 31, 2016·6 cites·22 claims
- 0276US9793184B2Sensor for a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2016·Granted Oct 17, 2017·2 cites·20 claims
- 0375US2025331246A1Semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 0470US8884342B2Semiconductor device with a passivation layerSCHMIDT GERHARD R·Filed 2012·Granted Nov 11, 2014·2 cites·30 claims
- 0568US11804415B2Semiconductor device with first and second portions that include silicon and nitrogenINFINEON TECHNOLOGIES AG·Filed 2021·Granted Oct 31, 2023·0 cites·20 claims
- 0668US2023343726A1High Voltage Semiconductor Device with Step Topography Passivation Layer StackINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 0767US12363961B2Semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2021·Granted Jul 15, 2025·0 cites·26 claims
- 0862US2025183175A1Semiconductor device with metal structure passivationINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 0960US11075134B2Semiconductor device with a portion including silicon and nitrogen and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jul 27, 2021·0 cites·24 claims
- 1058US2021151391A1High Voltage Semiconductor Device with Step Topography Passivation Layer StackINFINEON TECHNOLOGIES AG·Filed 2020·Application pending·0 cites
- 1154US9859395B2Semiconductor device with a passivation layerINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jan 2, 2018·0 cites·36 claims
- 1251US10199291B2Sensor for a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2017·Granted Feb 5, 2019·0 cites·20 claims
- 1351US2024194779A1Semiconductor device and method of producing thereofINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Application pending·0 cites
- 1441US11387359B2Ppower semiconductor device with anticorrosive edge termination structureINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jul 12, 2022·0 cites·20 claims
- 1541US2015262814A1Power semiconductor device,power electronic module, and method for processing a power semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2014·Application pending·0 cites
- 1640US2019333765A1Semiconductor Device and ManufacturingINFINEON TECHNOLOGIES AG·Filed 2019·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →