Inventor · disambiguated record
Hong-Qiang Lu
Also filed as: LU HONG-QIANG · LU HONG-QIANG MICHAEL
10 granted patents·281 citations·filing 2001–2008
91Inventor score
Top patents by PatentIndex Score
10 records- 0197US6955937B1Carbon nanotube memory cell for integrated circuit structure with removable side spacers to permit access to memory cell and process for forming such memory cellLSI LOGIC CORP·Filed 2004·Granted Oct 18, 2005·125 cites·21 claims
- 0287US6939800B1Dielectric barrier films for use as copper barrier layers in semiconductor trench and via structuresLSI LOGIC CORP·Filed 2002·Granted Sep 6, 2005·30 cites·7 claims
- 0386US7427563B2Dielectric barrier films for use as copper barrier layers in semiconductor trench and via structuresLSI CORP·Filed 2005·Granted Sep 23, 2008·9 cites·6 claims
- 0486US6503840B2Process for forming metal-filled openings in low dielectric constant dielectric material while inhibiting via poisoningLSI LOGIC CORP·Filed 2001·Granted Jan 7, 2003·40 cites·20 claims
- 0584US7393780B2Dual layer barrier film techniques to prevent resist poisoningLSI CORP·Filed 2006·Granted Jul 1, 2008·7 cites·6 claims
- 0680US6812134B1Dual layer barrier film techniques to prevent resist poisoningLSI LOGIC CORP·Filed 2001·Granted Nov 2, 2004·19 cites·13 claims
- 0779US6774057B1Method and structure for forming dielectric layers having reduced dielectric constantsLSI LOGIC CORP·Filed 2002·Granted Aug 10, 2004·22 cites·18 claims
- 0875US7646077B2Methods and structure for forming copper barrier layers integral with semiconductor substrates structuresLSI CORP·Filed 2008·Granted Jan 12, 2010·3 cites·22 claims
- 0972US6559033B1Processing for forming integrated circuit structure with low dielectric constant material between closely spaced apart metal linesLSI LOGIC CORP·Filed 2001·Granted May 6, 2003·22 cites·18 claims
- 1058US7071094B2Dual layer barrier film techniques to prevent resist poisoningLSI LOGIC CORP·Filed 2004·Granted Jul 4, 2006·4 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →