Inventor · disambiguated record
Riichiro Shirota
Also filed as: SHIROTA RIICHIRO
191 granted patents·21 pending applications·8,442 citations·filing 1988–2025
99Inventor score
Files withTOSHIBA KK152WINBOND ELECTRONICS CORP16UNISANTIS ELECT SINGAPORE PTE6SHIROTA RIICHIRO4WATANABE HIROSHI4
Top patents by PatentIndex Score
212 records- 0199US12100443B2Semiconductor-element-including memory deviceUNISANTIS ELECT SINGAPORE PTE·Filed 2022·Granted Sep 24, 2024·6 cites·10 claims
- 0299US8008732B2Semiconductor memory and method of manufacturing the sameTOSHIBA KK·Filed 2007·Granted Aug 30, 2011·244 cites·20 claims
- 0399US7696559B2Semiconductor memory device including pillar-shaped semiconductor layers and a method of fabricating the sameTOSHIBA KK·Filed 2006·Granted Apr 13, 2010·221 cites·15 claims
- 0499US7259992B2Semiconductor memory device with a memory cell array formed on a semiconductor substrateTOSHIBA KK·Filed 2005·Granted Aug 21, 2007·264 cites·11 claims
- 0599US6134140ANonvolatile semiconductor memory device with soft-programming to adjust erased state of memory cellsTOSHIBA KK·Filed 1998·Granted Oct 17, 2000·262 cites·24 claims
- 0699US5774397ANon-volatile semiconductor memory device and method of programming a non-volatile memory cell to a predetermined stateTOSHIBA KK·Filed 1996·Granted Jun 30, 1998·1.1k cites·54 claims
- 0799US4959812AElectrically erasable programmable read-only memory with NAND cell structureTOSHIBA KK·Filed 1988·Granted Sep 25, 1990·652 cites·15 claims
- 0898US6859394B2NAND type non-volatile semiconductor memory deviceTOSHIBA KK·Filed 2002·Granted Feb 22, 2005·140 cites·26 claims
- 0998US6798698B2Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2003·Granted Sep 28, 2004·106 cites·24 claims
- 1098US6549464B2Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2002·Granted Apr 15, 2003·92 cites·8 claims
- 1198US5602789AElectrically erasable and programmable non-volatile and multi-level memory systemn with write-verify controllerTOSHIBA KK·Filed 1995·Granted Feb 11, 1997·284 cites·25 claims
- 1298US5555204ANon-volatile semiconductor memory deviceTOSHIBA KK·Filed 1994·Granted Sep 10, 1996·203 cites·34 claims
- 1398US5386422AElectrically erasable and programmable non-volatile memory system with write-verify controller using two reference levelsTOSHIBA KK·Filed 1994·Granted Jan 31, 1995·293 cites·2 claims
- 1497US12131773B2Memory deviceUNISANTIS ELECT SINGAPORE PTE·Filed 2022·Granted Oct 29, 2024·7 cites·15 claims
- 1597US8148216B2Nonvolatile semiconductor memory and process of producing the sameARAI FUMITAKA·Filed 2010·Granted Apr 3, 2012·35 cites·3 claims
- 1697US7498630B2Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2006·Granted Mar 3, 2009·52 cites·20 claims
- 1797US6845042B2Nonvolatile semiconductor memory, fabrication method for the same, semiconductor integrated circuits and systemsTOSHIBA KK·Filed 2003·Granted Jan 18, 2005·149 cites·71 claims
- 1897US6014330ANon-volatile semiconductor memory deviceTOSHIBA KK·Filed 1998·Granted Jan 11, 2000·120 cites·56 claims
- 1997US5946231ANon-volatile semiconductor memory deviceTOSHIBA KK·Filed 1998·Granted Aug 31, 1999·129 cites·56 claims
- 2097US4939690AElectrically erasable programmable read-only memory with NAND cell structure that suppresses memory cell threshold voltage variationTOSHIBA KK·Filed 1988·Granted Jul 3, 1990·142 cites·15 claims
- 2196US8048741B2Semiconductor memory device and method of fabricating the sameTOSHIBA KK·Filed 2010·Granted Nov 1, 2011·26 cites·3 claims
- 2296US7875922B2Nonvolatile semiconductor memory and process of producing the sameTOSHIBA KK·Filed 2007·Granted Jan 25, 2011·39 cites·17 claims
- 2396US6493265B2Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2002·Granted Dec 10, 2002·96 cites·15 claims
- 2496US6208560B1Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2000·Granted Mar 27, 2001·73 cites·2 claims
- 2596US5361227ANon-volatile semiconductor memory device and memory system using the sameTOSHIBA KK·Filed 1992·Granted Nov 1, 1994·103 cites·130 claims
- 2695US10056433B2Semiconductor memory and method of manufacturing the sameTOSHIBA MEMORY CORP·Filed 2016·Granted Aug 21, 2018·7 cites·18 claims
- 2795US6252798B1Nonvolatile semiconductor memory device capable of controlling mutual timing of write voltage pulse and transfer voltage pulseTOSHIBA KK·Filed 1998·Granted Jun 26, 2001·140 cites·10 claims
- 2895US5293337AElectrically erasable programmable read-only memory with electric field decreasing controllerTOSHIBA KK·Filed 1991·Granted Mar 8, 1994·100 cites·13 claims
- 2994US11101325B2Semiconductor memory and method of manufacturing the sameTOSHIBA MEMORY CORP·Filed 2018·Granted Aug 24, 2021·5 cites·18 claims
- 3094US7049653B2Nonvolatile semiconductor memory device having element isolating region of trench typeTOSHIBA KK·Filed 2005·Granted May 23, 2006·18 cites·4 claims
- 3194US6925008B2Non-volatile semiconductor memory device with a memory unit including not more than two memory cell transistorsTOSHIBA KK·Filed 2002·Granted Aug 2, 2005·47 cites·16 claims
- 3294US6434055B2Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2001·Granted Aug 13, 2002·52 cites·21 claims
- 3394US6188611B1Non-volatile semiconductor memory deviceTOSHIBA KK·Filed 1999·Granted Feb 13, 2001·79 cites·6 claims
- 3494US5469444AElectrically erasable and programmable non-volatile memory system with write-verify controller using two reference levelsTOSHIBA KK·Filed 1994·Granted Nov 21, 1995·174 cites·20 claims
- 3594US5321699AElectrically erasable and programmable non-volatile memory system with write-verify controller using two reference levelsTOSHIBA KK·Filed 1992·Granted Jun 14, 1994·171 cites·20 claims
- 3693US12277962B2Memory device using semiconductor elementUNISANTIS ELECT SINGAPORE PTE·Filed 2022·Granted Apr 15, 2025·3 cites·12 claims
- 3793US7139201B2Non-volatile semiconductor memory device and memory system using the sameTOSHIBA KK·Filed 2005·Granted Nov 21, 2006·24 cites·74 claims
- 3893US6894341B2Semiconductor device and manufacturing methodTOSHIBA KK·Filed 2002·Granted May 17, 2005·61 cites·16 claims
- 3993US6314026B1Nonvolatile semiconductor device using local self boost techniqueTOSHIBA KK·Filed 2000·Granted Nov 6, 2001·65 cites·13 claims
- 4092US8223558B2Nonvolatile semiconductor memory deviceTANAKA TOMOHARU·Filed 2011·Granted Jul 17, 2012·9 cites·25 claims
- 4192US7082055B2Semiconductor integrated circuit deviceTOSHIBA KK·Filed 2005·Granted Jul 25, 2006·21 cites·11 claims
- 4292US6835978B2Nonvolatile semiconductor memory device having element isolating region of trench typeTOSHIBA KK·Filed 2001·Granted Dec 28, 2004·43 cites·9 claims
- 4392US6151249ANAND-type EEPROM having bit lines and source lines commonly coupled through enhancement and depletion transistorsTOSHIBA KK·Filed 1994·Granted Nov 21, 2000·94 cites·16 claims
- 4491US8599614B2Programming method for NAND flash memory device to reduce electrons in channelsMIIDA TAKASHI·Filed 2009·Granted Dec 3, 2013·28 cites·14 claims
- 4591US6853029B2Non-volatile semiconductor memory device with multi-layer gate structureTOSHIBA KK·Filed 2002·Granted Feb 8, 2005·58 cites·12 claims
- 4691US6172911B1Non-volatile semiconductor memory device with an improved verify voltage generatorTOSHIBA KK·Filed 1999·Granted Jan 9, 2001·54 cites·10 claims
- 4791US5453955ANon-volatile semiconductor memory deviceTOSHIBA KK·Filed 1994·Granted Sep 26, 1995·86 cites·11 claims
- 4890US10785022B2Network without abuse of a private keyWATANABE HIROSHI·Filed 2017·Granted Sep 22, 2020·9 cites·31 claims
- 4990USRE35838EElectrically erasable programmable read-only memory with NAND cell structureTOSHIBA KK·Filed 1995·Granted Jul 7, 1998·90 cites·16 claims
- 5090US5724300ANon-volatile semiconductor memory device and memory system using the sameTOSHIBA KK·Filed 1997·Granted Mar 3, 1998·50 cites·44 claims
Showing the top 50 of 212 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →