Inventor · disambiguated record
Jin-Seo Noh
Also filed as: NOH JIN-SEO
18 granted patents·4 pending applications·71 citations·filing 2005–2010
93Inventor score
Top patents by PatentIndex Score
22 records- 0183US8115264B2Semiconductor device having a metal gate with a low sheet resistance and method of fabricating metal gate of the samePARK SUNG-HO·Filed 2008·Granted Feb 14, 2012·10 cites·16 claims
- 0279US7674665B2Method of fabricating Schottky barrier transistorSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 9, 2010·5 cites·8 claims
- 0373US7508041B2Magnetic memory device having uniform switching characteristics and capable of switching with low current and associated methodsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 24, 2009·9 cites·23 claims
- 0471US7541633B2Phase-change RAM and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 2, 2009·4 cites·16 claims
- 0568US7573058B2Phase change materials, phase change random access memories having the same and methods of operating phase change random access memoriesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 11, 2009·6 cites·4 claims
- 0667US7872908B2Phase change memory devices and fabrication methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jan 18, 2011·7 cites·12 claims
- 0765US7626859B2Phase-change random access memory and programming methodSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 1, 2009·5 cites·13 claims
- 0864US7902011B2Method of fabricating Schottky barrier transistorSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Mar 8, 2011·1 cites·7 claims
- 0963US7777213B2Phase change layer including indium and method of manufacturing the same and phase change memory device comprising phase change layer including indium and methods of manufacturing and operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 17, 2010·4 cites·5 claims
- 1062US7599216B2Phase change memory devices and fabrication methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 6, 2009·6 cites·9 claims
- 1161US7872250B2Phase-change ram and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jan 18, 2011·1 cites·17 claims
- 1261US7372125B2Phase change memory devices using magnetic resistance effect, methods of operating and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 13, 2008·4 cites·39 claims
- 1358US7800186B2Semiconductor device and method of fabricating metal gate of the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 21, 2010·1 cites·11 claims
- 1458US7572662B2Method of fabricating phase change RAM including a fullerene layerSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 11, 2009·1 cites·23 claims
- 1557US7642540B2Phase change random access memory and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 5, 2010·3 cites·12 claims
- 1655US7993963B2Phase change layer and method of manufacturing the same and phase change memory device comprising phase change layer and methods of manufacturing and operating phase change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Aug 9, 2011·1 cites·18 claims
- 1751US7824953B2Method of operating and structure of phase change random access memory (PRAM)SAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 2, 2010·2 cites·9 claims
- 1847US7956342B2Phase change material for use in a phase change random access memory, the phase change material having uniformly distributed insulating impuritiesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 7, 2011·1 cites·14 claims
- 1941US2009279352A1Storage nodes, phase change memories including a doped phase change layer, and methods of operating and fabricating the sameNOH JIN-SEO·Filed 2009·Application pending·0 cites
- 2041US2007184613A1Phase change RAM including resistance element having diode function and methods of fabricating and operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2139US2008023686A1Storage nodes, phase change memories including a doped phase change layer, and methods of operating and fabricating the sameNOH JIN-SEO·Filed 2007·Application pending·0 cites
- 2235US2007200108A1Storage node, phase change random access memory and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →