Inventor · disambiguated record
Youn-Seon Kang
Also filed as: KANG YOUN-SEON
20 granted patents·10 pending applications·199 citations·filing 2000–2024
93Inventor score
Files withSAMSUNG ELECTRONICS CO LTD19JUNG SEUNG-JAE2LEE JIN-WOO2SEONG DONG-JUN2KOREA ADVANCED INST SCI & TECH1
Top patents by PatentIndex Score
30 records- 0196US6376027B1Method for crystallizing lithium transition metal oxide thin film by plasma treatmentKOREA ADVANCED INST SCI & TECH·Filed 2000·Granted Apr 23, 2002·121 cites·7 claims
- 0295US7902048B2Method of forming a phase change layer and method of manufacturing a storage node having the phase change layerSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 8, 2011·32 cites·7 claims
- 0389US9184218B2Semiconductor memory device having three-dimensional cross point arraySAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Nov 10, 2015·10 cites·20 claims
- 0486US9685609B2Variable resistance memory devices and methods of manufacturing the sameJUNG SEUNG-JAE·Filed 2015·Granted Jun 20, 2017·5 cites·18 claims
- 0585US9391269B2Variable resistance memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jul 12, 2016·5 cites·17 claims
- 0684US9450025B2Resistive memory device and method of operating resistive memory deviceJUNG SEUNG-JAE·Filed 2015·Granted Sep 20, 2016·5 cites·13 claims
- 0776US9640586B2Semiconductor diodes, and variable resistance memory devicesSEONG DONG-JUN·Filed 2015·Granted May 2, 2017·3 cites·12 claims
- 0873US9812501B2Variable resistance memory devices and methods of manufacturing the sameLEE JIN-WOO·Filed 2015·Granted Nov 7, 2017·2 cites·20 claims
- 0973US2025126816A1Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1070US8017929B2Phase change material layers and phase change memory devices including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 13, 2011·5 cites·15 claims
- 1168US12211891B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jan 28, 2025·0 cites·20 claims
- 1264US7737527B2Phase change material containing carbon, memory device including the phase change material, and method of operating the memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jun 15, 2010·2 cites·19 claims
- 1363US7777213B2Phase change layer including indium and method of manufacturing the same and phase change memory device comprising phase change layer including indium and methods of manufacturing and operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 17, 2010·4 cites·5 claims
- 1462US9373664B2Variable resistance memory devices and methods of manufacturing the sameSEONG DONG-JUN·Filed 2015·Granted Jun 21, 2016·1 cites·19 claims
- 1560US7994492B2Phase change material, phase change memory device including the same, and methods of manufacturing and operating the phase change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 9, 2011·1 cites·14 claims
- 1655US7993963B2Phase change layer and method of manufacturing the same and phase change memory device comprising phase change layer and methods of manufacturing and operating phase change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Aug 9, 2011·1 cites·18 claims
- 1755US2008156651A1Method of forming phase change layer, method of manufacturing a storage node using the same, and method of manufacturing phase change memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1853US9269746B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Feb 23, 2016·0 cites·20 claims
- 1953US2008050892A1Method of manufacturing a thin film structure, method of manufacturing a storage node using the same, method of manufacturing a phase change random access memory using the same and a thin film structure, a storage node and a phase change random access memory formed using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2051US10276793B2Variable resistance memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Apr 30, 2019·0 cites·15 claims
- 2151US8003162B2Method of forming phase change layer using a germanium precursor and method of manufacturing phase change memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 23, 2011·2 cites·23 claims
- 2248US9431458B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 30, 2016·0 cites·4 claims
- 2347US2009159868A1Phase change material layer and phase change memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 2445US2004228965A1Method for surface treatment of lithium manganese oxide for positive electrode in lithium secondary batteryFiled 2004·Application pending·0 cites
- 2544US2009173927A1Storage node, phase change memory device and methods of manufacturing and operating the sameSEOUL UNIVERSITY INDUSTRY FOUN·Filed 2008·Application pending·0 cites
- 2640US7754586B2Method of surface treating a phase change layer and method of manufacturing a phase change memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 13, 2010·0 cites·17 claims
- 2740US2013109148A1Methods of forming a pattern and methods of manufacturing semiconductor devices using the sameOH GYU-HWAN·Filed 2012·Application pending·0 cites
- 2840US2001031311A1Method for surface treatment of lithium manganese oxide for positive electrode in lithium secondary batteryFiled 2000·Application pending·0 cites
- 2935US2016013406A1Variable resistive memory deviceLEE JIN-WOO·Filed 2015·Application pending·0 cites
- 3034US2015340610A1Variable resistance memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →