Inventor · disambiguated record
Atsutoshi Arakawa
Also filed as: ARAKAWA ATSUTOSHI
19 granted patents·7 pending applications·128 citations·filing 2000–2016
91Inventor score
Files withNIPPON MINING CO7ARAKAWA ATSUTOSHI6JX NIPPON MINING & METALS CORP6OGINO SHIN-ICHI3IKEDA YUKI1
Top patents by PatentIndex Score
26 records- 0191US6791257B1Photoelectric conversion functional element and production method thereofJAPAN ENERGY CORP·Filed 2000·Granted Sep 14, 2004·105 cites·33 claims
- 0286US9269389B2Sputtering target of magnetic materialARAKAWA ATSUTOSHI·Filed 2010·Granted Feb 23, 2016·5 cites·10 claims
- 0386US8679268B2Sputtering target of ferromagnetic material with low generation of particlesOGINO SHIN-ICHI·Filed 2010·Granted Mar 25, 2014·6 cites·12 claims
- 0479US10644230B2Magnetic material sputtering target and method for producing sameJX NIPPON MINING & METALS CORP·Filed 2016·Granted May 5, 2020·1 cites·19 claims
- 0579US9181617B2Sputtering target of ferromagnetic material with low generation of particlesOGINO SHIN-ICHI·Filed 2011·Granted Nov 10, 2015·2 cites·20 claims
- 0666US10724134B2Magnetic material sputtering target and method for producing sameJX NIPPON MINING & METALS CORP·Filed 2014·Granted Jul 28, 2020·1 cites·16 claims
- 0765US9761422B2Magnetic material sputtering target and manufacturing method for sameJX NIPPON MINING & METALS CORP·Filed 2013·Granted Sep 12, 2017·1 cites·14 claims
- 0865US7358159B2Method for manufacturing ZnTe compound semiconductor single crystal ZnTe compound semiconductor single crystal, and semiconductor deviceNIPPON MINING CO·Filed 2002·Granted Apr 15, 2008·6 cites·17 claims
- 0962US8758476B2Method of producing mixed powder comprising noble metal powder and oxide powder, and mixed powder comprising noble metal powder and oxide powderARAKAWA ATSUTOSHI·Filed 2009·Granted Jun 24, 2014·0 cites·12 claims
- 1060US9732414B2Co—Cr—Pt-based sputtering target and method for producing sameJX NIPPON MINING & METALS CORP·Filed 2012·Granted Aug 15, 2017·0 cites·14 claims
- 1157US7696073B2Method of co-doping group 14 (4B) elements to produce ZnTe system compound semiconductor single crystalNIPPON MINING CO·Filed 2007·Granted Apr 13, 2010·0 cites·2 claims
- 1257US7629625B2Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor deviceNIPPON MINING CO·Filed 2007·Granted Dec 8, 2009·0 cites·4 claims
- 1357US7521282B2Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor deviceNIPPON MINING CO·Filed 2007·Granted Apr 21, 2009·0 cites·9 claims
- 1457US7517720B2Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor deviceNIPPON MINING CO·Filed 2007·Granted Apr 14, 2009·0 cites·9 claims
- 1551US9773653B2Ferromagnetic material sputtering target containing chromium oxideJX NIPPON MINING & METALS CORP·Filed 2013·Granted Sep 26, 2017·0 cites·5 claims
- 1650US7229494B2Production method for compound semiconductor single crystalNIPPON MINING CO·Filed 2002·Granted Jun 12, 2007·1 cites·8 claims
- 1750US2014001038A1Ferromagnetic Sputtering Target with Less Particle GenerationOGINO SHIN-ICHI·Filed 2012·Application pending·0 cites
- 1846US2013206593A1Ferromagnetic material sputtering targetARAKAWA ATSUTOSHI·Filed 2011·Application pending·0 cites
- 1946US2013206592A1Ferromagnetic Sputtering TargetARAKAWA ATSUTOSHI·Filed 2011·Application pending·0 cites
- 2045US9228251B2Ferromagnetic material sputtering targetSATO ATSUSHI·Filed 2010·Granted Jan 5, 2016·0 cites·42 claims
- 2143US2015014155A1Ferromagnetic Material Sputtering Target Containing Chromium OxideJX NIPPON MINING & METALS CORP·Filed 2013·Application pending·0 cites
- 2243US2013220804A1Ferromagnetic Material Sputtering TargetARAKAWA ATSUTOSHI·Filed 2011·Application pending·0 cites
- 2340US6989059B2Process for producing single crystal of compound semiconductor and crystal growing apparatusNIKKO MATERIALS CO LTD·Filed 2003·Granted Jan 24, 2006·0 cites·5 claims
- 2439US2012318669A1Sputtering target-backing plate assemblyIKEDA YUKI·Filed 2011·Application pending·0 cites
- 2537US2013213804A1Ferromagnetic material sputtering targetARAKAWA ATSUTOSHI·Filed 2011·Application pending·0 cites
- 2633US7544343B2CdTe system compound semiconductor single crystalNIPPON MINING CO·Filed 2005·Granted Jun 9, 2009·0 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →