Inventor · disambiguated record
Giovanni Abagnale
Also filed as: ABAGNALE GIOVANNI
6 granted patents·25 citations·filing 2008–2019
77Inventor score
Top patents by PatentIndex Score
6 records- 0180US9024357B2Method for manufacturing a HEMT transistor and corresponding HEMT transistorPUGLISI VALERIA·Filed 2012·Granted May 5, 2015·19 cites·20 claims
- 0270US7888256B2Process for forming an interface between silicon carbide and silicon oxide with low density of statesST MICROELECTRONICS SRL·Filed 2008·Granted Feb 15, 2011·3 cites·29 claims
- 0367US11594667B2Process for realizing a system for recovering heat, in particular based on the Seebeck's effect, and corresponding systemST MICROELECTRONICS SRL·Filed 2019·Granted Feb 28, 2023·0 cites·26 claims
- 0466US8183573B2Process for forming an interface between silicon carbide and silicon oxide with low density of statesABAGNALE GIOVANNI·Filed 2011·Granted May 22, 2012·2 cites·20 claims
- 0561US9105811B2Process for realizing a system for recovering heat, in particular based on the Seebeck's effect, and corresponding systemABAGNALE GIOVANNI·Filed 2010·Granted Aug 11, 2015·1 cites·22 claims
- 0657US10510941B2Process for realizing a system for recovering heat, in particular based on the seebeck's effect, and corresponding systemST MICROELECTRONICS SRL·Filed 2015·Granted Dec 17, 2019·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →