Inventor · disambiguated record
Damian Carver
Also filed as: CARVER DAMIAN · CARVER DAMIAN A
10 granted patents·4 pending applications·93 citations·filing 1994–2013
87Inventor score
Top patents by PatentIndex Score
14 records- 0195US7208795B2Low-cost, low-voltage single-layer polycrystalline EEPROM memory cell integration into BiCMOS technologyATMEL CORP·Filed 2005·Granted Apr 24, 2007·67 cites·28 claims
- 0272US8530934B2Integrated circuit structures containing a strain-compensated compound semiconductor layer and methods and systems related theretoENICKS DARWIN G·Filed 2010·Granted Sep 10, 2013·3 cites·15 claims
- 0369US7300849B2Bandgap engineered mono-crystalline silicon cap layers for SiGe HBT performance enhancementATMEL CORP·Filed 2005·Granted Nov 27, 2007·4 cites·13 claims
- 0464US7408812B2Low-voltage single-layer polysilicon EEPROM memory cellATMEL CORP·Filed 2006·Granted Aug 5, 2008·2 cites·7 claims
- 0559US7651919B2Bandgap and recombination engineered emitter layers for SiGe HBT performance optimizationATMEL CORP·Filed 2005·Granted Jan 26, 2010·2 cites·14 claims
- 0654US7144775B2Low-voltage single-layer polysilicon eeprom memory cellATMEL CORP·Filed 2004·Granted Dec 5, 2006·5 cites·12 claims
- 0751US9012308B2Integrated circuit structures containing a strain-compensated compound semiconductor layer and methods and systems related theretoATMEL CORP·Filed 2013·Granted Apr 21, 2015·0 cites·20 claims
- 0845US2007087550A1Low-voltage single-layer polysilicon eeprom memory cellATMEL CORP·Filed 2006·Application pending·0 cites
- 0938US2007148890A1Oxygen enhanced metastable silicon germanium film layerENICKS DARWIN G·Filed 2005·Application pending·0 cites
- 1036US5631180AMethod of fabricating high threshold metal oxide silicon read-only-memory transistorsZILOG INC·Filed 1995·Granted May 20, 1997·6 cites·22 claims
- 1135US2006292809A1Method for growth and optimization of heterojunction bipolar transistor film stacks by remote injectionENICKS DARWIN G·Filed 2005·Application pending·0 cites
- 1234US2007102729A1Method and system for providing a heterojunction bipolar transistor having SiGe extensionsENICKS DARWIN G·Filed 2005·Application pending·0 cites
- 1332US5389565AMethod of fabricating high threshold metal oxide silicon read-only-memory transistorsZILOG INC·Filed 1994·Granted Feb 14, 1995·3 cites·14 claims
- 1427US5498896AHigh threshold metal oxide silicon read-only-memory transistorsZILOG INC·Filed 1994·Granted Mar 12, 1996·1 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →