Inventor · disambiguated record

John W. Mosier, Ii

Also filed as: MOSIER II JOHN W · MOSIER JOHN W

6 granted patents·1 pending application·953 citations·filing 1988–2002

90Inventor score

Technology areasH10P

Files withADVANCED POWER TECHNOLOGY7

Top patents by PatentIndex Score

7 records

0195US5801417ASelf-aligned power MOSFET device with recessed gate and sourceADVANCED POWER TECHNOLOGY·Filed 1993·Granted Sep 1, 1998·236 cites·3 claims
0295US5283201AHigh density power device fabrication processADVANCED POWER TECHNOLOGY·Filed 1992·Granted Feb 1, 1994·248 cites·20 claims
0393US5648283AHigh density power device fabrication process using undercut oxide sidewallsADVANCED POWER TECHNOLOGY·Filed 1994·Granted Jul 15, 1997·167 cites·34 claims
0490US4895810AIopographic pattern delineated power mosfet with profile tailored recessed sourceADVANCED POWER TECHNOLOGY·Filed 1988·Granted Jan 23, 1990·112 cites·48 claims
0587US5045903ATopographic pattern delineated power MOSFET with profile tailored recessed sourceADVANCED POWER TECHNOLOGY·Filed 1989·Granted Sep 3, 1991·87 cites·16 claims
0685US5019522AMethod of making topographic pattern delineated power MOSFET with profile tailored recessed sourceADVANCED POWER TECHNOLOGY·Filed 1990·Granted May 28, 1991·103 cites·10 claims
0736US2002074585A1Self-aligned power MOSFET with enhanced base regionADVANCED POWER TECHNOLOGY·Filed 2002·Application pending·0 cites

Join the waitlist — get patent alerts

Get an alert when John W. Mosier, Ii files or is granted a new patent.

We store only your email — no account needed. See our privacy policy.

Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →