Inventor · disambiguated record
Hirotomo Miura
Also filed as: MIURA HIROTOMO
9 granted patents·306 citations·filing 1997–2003
90Inventor score
Technology areasH10D
Top patents by PatentIndex Score
9 records- 0196US6469343B1Multi-level type nonvolatile semiconductor memory deviceNIPPON STEEL CORP·Filed 2000·Granted Oct 22, 2002·114 cites·3 claims
- 0290US6596590B1Method of making multi-level type non-volatile semiconductor memory deviceNIPPON STEEL CORP·Filed 2000·Granted Jul 22, 2003·55 cites·12 claims
- 0390US6285596B1Multi-level type nonvolatile semiconductor memory deviceNIPPON STEEL CORP·Filed 2000·Granted Sep 4, 2001·57 cites·4 claims
- 0479US6605839B2Multi-level type nonvolatile semiconductor memory deviceNIPPON STEEL CORP·Filed 2002·Granted Aug 12, 2003·21 cites·1 claims
- 0575US6649542B2Multi-level type nonvolatile semiconductor memory deviceNIPPON STEEL CORP·Filed 2002·Granted Nov 18, 2003·17 cites·3 claims
- 0663US5932917AInput protective circuit having a diffusion resistance layerNIPPON STEEL CORP·Filed 1997·Granted Aug 3, 1999·23 cites·7 claims
- 0758US6208003B1Semiconductor structure provided with a polycide interconnection layer having a silicide film formed on a polycrystal silicon filmNIPPON STEEL CORP·Filed 1998·Granted Mar 27, 2001·14 cites·10 claims
- 0855US6800911B2Method of making a polycide interconnection layer having a silicide film formed on a polycrystal silicon for a semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2003·Granted Oct 5, 2004·5 cites·10 claims
- 0936US6596567B1Method for fabricating a semiconductor device having a impurity layer disposed between a non-doped silicon film and high melting-point metal film for reducing solid state reaction between said high melting-point metal film and polycrystal silicon filmUNITED MICROELECTRONICS CORP·Filed 2000·Granted Jul 22, 2003·0 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →