Inventor · disambiguated record
Maria C. Chan
Also filed as: CHAN MARIA · CHAN MARIA C · CHAN MARIA CHOW
17 granted patents·160 citations·filing 1996–2001
94Inventor score
Top patents by PatentIndex Score
17 records- 0183US6455888B1Memory cell structure for elimination of oxynitride (ONO) etch residue and polysilicon stringersADVANCED MICRO DEVICES INC·Filed 2000·Granted Sep 24, 2002·10 cites·11 claims
- 0266US5933729AReduction of ONO fence during self-aligned etch to eliminate poly stringersADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 3, 1999·32 cites·16 claims
- 0364US6046085AElimination of poly stringers with straight poly profileADVANCED MICRO DEVICES INC·Filed 1997·Granted Apr 4, 2000·21 cites·12 claims
- 0460US6610580B1Flash memory array and a method and system of fabrication thereofADVANCED MICRO DEVICES INC·Filed 2000·Granted Aug 26, 2003·11 cites·6 claims
- 0559US6030868AElimination of oxynitride (ONO) etch residue and polysilicon stringers through isolation of floating gates on adjacent bitlines by polysilicon oxidationADVANCED MICRO DEVICES INC·Filed 1998·Granted Feb 29, 2000·16 cites·13 claims
- 0658US6352930B1Bilayer anti-reflective coating and etch hard maskADVANCED MICRO DEVICES INC·Filed 2001·Granted Mar 5, 2002·5 cites·10 claims
- 0754US6495435B2Method for improved control of lines adjacent to a select gate using a mask assist featureADVANCE MICRO DEVICES INC·Filed 2001·Granted Dec 17, 2002·6 cites·7 claims
- 0850US6306706B1Method and system for fabricating a flash memory arrayADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 23, 2001·4 cites·8 claims
- 0948US7012008B1Dual spacer process for non-volatile memory devicesADVANCED MICRO DEVICES INC·Filed 2000·Granted Mar 14, 2006·3 cites·19 claims
- 1048US6448594B1Method and system for processing a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2000·Granted Sep 10, 2002·3 cites·1 claims
- 1148US6087271AMethods for removal of an anti-reflective coating following a resist protect etching processADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 11, 2000·14 cites·12 claims
- 1248US6027959AMethods for in-situ removal of an anti-reflective coating during a nitride resistor protect etching processADVANCED MICRO DEVICES INC·Filed 1997·Granted Feb 22, 2000·14 cites·15 claims
- 1342US6043120AElimination of oxynitride (ONO) etch residue and polysilicon stringers through isolation of floating gates on adjacent bitlines by polysilicon oxidationADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 28, 2000·6 cites·17 claims
- 1441US6232002B1Bilayer anti-reflective coating and etch hard maskADVANCED MICRO DEVICES INC·Filed 1998·Granted May 15, 2001·7 cites·7 claims
- 1541US6110833AElimination of oxynitride (ONO) etch residue and polysilicon stringers through isolation of floating gates on adjacent bitlines by polysilicon oxidationADVANCED MICRO DEVICES INC·Filed 1998·Granted Aug 29, 2000·4 cites·13 claims
- 1636US6603211B2Method and system for providing a robust alignment mark at thin oxide layersADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 5, 2003·0 cites·6 claims
- 1726US6593245B1Silicon nitride etch process with critical dimension gainADVANCED MICRO DEVICES INC·Filed 1996·Granted Jul 15, 2003·4 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →