Inventor · disambiguated record
Eldon J. Zorinsky
Also filed as: ZORINSKY ELDON J
11 granted patents·284 citations·filing 1984–1993
92Inventor score
Files withTEXAS INSTRUMENTS INC11
Top patents by PatentIndex Score
11 records- 0186US4891103AAnadization system with remote voltage sensing and active feedback control capabilitiesTEXAS INSTRUMENTS INC·Filed 1988·Granted Jan 2, 1990·37 cites·16 claims
- 0277US4628591AMethod for obtaining full oxide isolation of epitaxial islands in silicon utilizing selective oxidation of porous siliconTEXAS INSTRUMENTS INC·Filed 1984·Granted Dec 16, 1986·43 cites·7 claims
- 0372US4897703ARecessed contact bipolar transistor and methodTEXAS INSTRUMENTS INC·Filed 1988·Granted Jan 30, 1990·25 cites·11 claims
- 0470US4985744AMethod for forming a recessed contact bipolar transistor and field effect transistorTEXAS INSTRUMENTS INC·Filed 1989·Granted Jan 15, 1991·27 cites·5 claims
- 0567US4810667ADielectric isolation using isolated silicon by limited anodization of an N+ epitaxially defined sublayer in the presence of a diffusion under film layerTEXAS INSTRUMENTS INC·Filed 1987·Granted Mar 7, 1989·34 cites·9 claims
- 0664US5316957AMethod of forming a recessed contact bipolar transistorTEXAS INSTRUMENTS INC·Filed 1993·Granted May 31, 1994·21 cites·16 claims
- 0764US5075241AMethod of forming a recessed contact bipolar transistor and field effect deviceTEXAS INSTRUMENTS INC·Filed 1990·Granted Dec 24, 1991·25 cites·8 claims
- 0860US4849370AAnodizable strain layer for SOI semiconductor structuresTEXAS INSTRUMENTS INC·Filed 1987·Granted Jul 18, 1989·25 cites·15 claims
- 0957US4982263AAnodizable strain layer for SOI semiconductor structuresTEXAS INSTRUMENTS INC·Filed 1989·Granted Jan 1, 1991·23 cites·13 claims
- 1052US4897698AHorizontal structure thin film transistorTEXAS INSTRUMENTS INC·Filed 1988·Granted Jan 30, 1990·16 cites·7 claims
- 1135US5019525AMethod for forming a horizontal self-aligned transistorTEXAS INSTRUMENTS INC·Filed 1990·Granted May 28, 1991·8 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →