Inventor · disambiguated record
Seulji Song
Also filed as: SONG SEULJI
9 granted patents·24 pending applications·4 citations·filing 2017–2024
76Inventor score
Top patents by PatentIndex Score
33 records- 0180US12237047B2Method of reading data from self-selecting memory, self-selecting memory performing the same and method of operating self-selecting memory using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Feb 25, 2025·1 cites·20 claims
- 0268US10056431B2Variable resistance memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Aug 21, 2018·1 cites·20 claims
- 0366US10714686B2Variable resistance memory devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jul 14, 2020·2 cites·15 claims
- 0463US2025056814A1Memory device including switching patternSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0560US2025157934A1Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0659US2024237348A1Semiconductor memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0759US2025056813A1Semiconductor chip and semiconductor package including the semiconductor chipSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0859US2025169080A1Vertical memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0958US2025063738A1Semiconductor memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1058US2024422970A1Three-dimensional (3d) vertical memory device and method of manufacturing sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1157US12436106B2Apparatus and method for inspecting semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Oct 7, 2025·0 cites·17 claims
- 1257US2024421081A1Memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1356US2025120116A1Semiconductor device including vertical gate-modulated channel regionSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1456US2025015135A1Vertical channel transistors have enhanced source-to-drain current paths thereinSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1555US12419059B2Self-selecting memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Sep 16, 2025·0 cites·20 claims
- 1655US2025040145A1Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1755US2025024691A1Three-dimensional memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1855US2024422994A1Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1954US2024422991A1Vertical memory device including selector with variable resistive materialSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2054US2025008747A1Three-dimensional memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2154US2025063957A1Vertical memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2254US2025048655A1Semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2353US2024244851A1Semiconductor deviceSAMSUNIG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2451US2025048650A1Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2550US2025157518A1Memory device including ferroelectric cell capacitor and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2650US2025054532A1Memory devices including ferroelectric cell capacitors and operating methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2749US11502130B2Variable resistance memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 15, 2022·0 cites·17 claims
- 2849US2025095732A1Memory device and initializing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2948US2025017021A1Semiconductor memory devices and manufacturing methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3047US10923654B2Variable resistance memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 16, 2021·0 cites·16 claims
- 3147US2025151286A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3243US10991880B2Variable resistance memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 27, 2021·0 cites·6 claims
- 3340US11276821B2Variable resistance memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 15, 2022·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →